Tuning of Fermi contour anisotropy in GaAs (001) 2D holes via strain

Jo, Insun; Mueed, M. A.; Pfeiffer, L. N.; West, K. W.; Baldwin, K. W.; Winkler, R.; Padmanabhan, Medini; Shayegan, M.

doi:10.1063/1.4984954

Title: Tuning of Fermi contour anisotropy in GaAs (001) 2D holes via strain

Journal Article · Tue Jun 20 00:00:00 EDT 2017 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4984954· OSTI ID:1535312

Jo, Insun ^[1]; Mueed, M. A. ^[1]; Pfeiffer, L. N. ^[1]; West, K. W. ^[1]; Baldwin, K. W. ^[1]; Winkler, R. ^[2]; Padmanabhan, Medini ^[3]; Shayegan, M. ^[1]

Princeton Univ., Princeton, NJ (United States). Dept. of Electrical Engineering
Northern Illinois Univ., DeKalb, IL (United States). Dept. of Physics
Rhode Island College, Providence, RI (United States). Physical Sciences Dept.

In this paper, we demonstrate tuning of the Fermi contour anisotropy of two-dimensional (2D) holes in a symmetric GaAs (001) quantum well via the application of in-plane strain. The ballistic transport of high-mobility hole carriers allows us to measure the Fermi wavevector of 2D holes via commensurability oscillations as a function of strain. Our results show that a small amount of in-plane strain, on the order of 10^-4, can induce significant Fermi wavevector anisotropy as large as 3.3, equivalent to a mass anisotropy of 11 in a parabolic band. Our method to tune the anisotropy in situ provides a platform to study the role of anisotropy in phenomena such as the fractional quantum Hall effect and composite fermions in interacting 2D systems.

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Research Organization:: Princeton Univ., NJ (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: FG02-00-ER45841

OSTI ID:: 1535312

Alternate ID(s):: OSTI ID: 1364449

Journal Information:: Applied Physics Letters, Vol. 110, Issue 25; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 6 works

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Cited By (2)

Interaction-dependent anisotropy of fractional quantum Hall states Krishna, Akshay; Chen, Fan; Ippoliti, Matteo Physical Review B, Vol. 100, Issue 8 https://doi.org/10.1103/physrevb.100.085129	journal	August 2019
Interaction-dependent anisotropy of fractional quantum Hall states Krishna, Akshay; Chen, Fan; Ippoliti, Matteo arXiv https://doi.org/10.48550/arxiv.1906.02835	text	January 2019

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