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Title: Calculation of strain compensation thickness for III–V semiconductor quantum dot superlattices

Abstract

Not provided.

Authors:
; ; ; ;
Publication Date:
Research Org.:
Rochester Inst. of Technology, Rochester, NY (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
OSTI Identifier:
1533967
DOE Contract Number:  
FG36-08GO18012
Resource Type:
Journal Article
Journal Name:
Journal of Crystal Growth
Additional Journal Information:
Journal Volume: 454; Journal Issue: C; Journal ID: ISSN 0022-0248
Publisher:
Elsevier
Country of Publication:
United States
Language:
English
Subject:
Crystallography; Materials Science; Physics

Citation Formats

Polly, S. J., Bailey, C. G., Grede, A. J., Forbes, D. V., and Hubbard, S. M. Calculation of strain compensation thickness for III–V semiconductor quantum dot superlattices. United States: N. p., 2016. Web. doi:10.1016/j.jcrysgro.2016.08.050.
Polly, S. J., Bailey, C. G., Grede, A. J., Forbes, D. V., & Hubbard, S. M. Calculation of strain compensation thickness for III–V semiconductor quantum dot superlattices. United States. doi:10.1016/j.jcrysgro.2016.08.050.
Polly, S. J., Bailey, C. G., Grede, A. J., Forbes, D. V., and Hubbard, S. M. Tue . "Calculation of strain compensation thickness for III–V semiconductor quantum dot superlattices". United States. doi:10.1016/j.jcrysgro.2016.08.050.
@article{osti_1533967,
title = {Calculation of strain compensation thickness for III–V semiconductor quantum dot superlattices},
author = {Polly, S. J. and Bailey, C. G. and Grede, A. J. and Forbes, D. V. and Hubbard, S. M.},
abstractNote = {Not provided.},
doi = {10.1016/j.jcrysgro.2016.08.050},
journal = {Journal of Crystal Growth},
issn = {0022-0248},
number = C,
volume = 454,
place = {United States},
year = {2016},
month = {11}
}