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Title: Floating Silicon Method single crystal ribbon – observations and proposed limit cycle theory

Abstract

Not provided.

Authors:
; ; ; ; ;
Publication Date:
Research Org.:
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
OSTI Identifier:
1533964
DOE Contract Number:  
EE0000595
Resource Type:
Journal Article
Journal Name:
Journal of Crystal Growth
Additional Journal Information:
Journal Volume: 451; Journal Issue: C; Journal ID: ISSN 0022-0248
Publisher:
Elsevier
Country of Publication:
United States
Language:
English
Subject:
Crystallography; Materials Science; Physics

Citation Formats

Kellerman, Peter, Kernan, Brian, Helenbrook, Brian T., Sun, Dawei, Sinclair, Frank, and Carlson, Frederick. Floating Silicon Method single crystal ribbon – observations and proposed limit cycle theory. United States: N. p., 2016. Web. doi:10.1016/j.jcrysgro.2016.07.012.
Kellerman, Peter, Kernan, Brian, Helenbrook, Brian T., Sun, Dawei, Sinclair, Frank, & Carlson, Frederick. Floating Silicon Method single crystal ribbon – observations and proposed limit cycle theory. United States. doi:10.1016/j.jcrysgro.2016.07.012.
Kellerman, Peter, Kernan, Brian, Helenbrook, Brian T., Sun, Dawei, Sinclair, Frank, and Carlson, Frederick. Sat . "Floating Silicon Method single crystal ribbon – observations and proposed limit cycle theory". United States. doi:10.1016/j.jcrysgro.2016.07.012.
@article{osti_1533964,
title = {Floating Silicon Method single crystal ribbon – observations and proposed limit cycle theory},
author = {Kellerman, Peter and Kernan, Brian and Helenbrook, Brian T. and Sun, Dawei and Sinclair, Frank and Carlson, Frederick},
abstractNote = {Not provided.},
doi = {10.1016/j.jcrysgro.2016.07.012},
journal = {Journal of Crystal Growth},
issn = {0022-0248},
number = C,
volume = 451,
place = {United States},
year = {2016},
month = {10}
}