Interfacial thermal conductance between few to tens of layered-MoS2 and c-Si: Effect of MoS2 thickness

Yuan, Pengyu; Li, Chong; Xu, Shen; Liu, Jing; Wang, Xinwei

doi:10.1016/j.actamat.2016.09.045

Title: Interfacial thermal conductance between few to tens of layered-MoS₂ and c-Si: Effect of MoS₂ thickness

Journal Article · Mon Oct 03 00:00:00 EDT 2016 · Acta Materialia

DOI:https://doi.org/10.1016/j.actamat.2016.09.045· OSTI ID:1533452

Yuan, Pengyu ^[1]; Li, Chong ^[1]; Xu, Shen ^[1]; Liu, Jing ^[1]; Wang, Xinwei ^[2]

Iowa State Univ., Ames, IA (United States). Dept. of Mechanical Engineering
Iowa State Univ., Ames, IA (United States). Dept. of Mechanical Engineering; Qingdao Technological Univ. (China). School of Environmental and Municipal Engineering

We report a systematic investigation of interfacial thermal conductance (G_k) between few to tens -layered mechanical exfoliated molybdenum disulfide (MoS₂) and crystalline silicon (c-Si). Based on Raman spectroscopy, we find G_k at room temperature increases with increased layer numbers of MoS₂ from 0.974 MW m^-2 K^-1 to 68.6 MW m^-2 K^-1. The higher G_k of thicker samples reveals their better interface contact with the substrate, leading to accordingly improved interfacial energy coupling. Molecular dynamics (MD) simulations are conducted to interpret and compare with the experimental observations. MD simulations predict a thermal conductance in the range of 53–77 MW m^-2 K^-1, which agrees well with the upper bound G_k measured in our work. The thickness dependence of measured G_k reflects the improved interface spacing for thicker MoS₂ samples. This phenomenon is further confirmed by the Raman intensity enhancement study by the interface spacing and local optical interference calculations.

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Research Organization:: Iowa State Univ., Ames, IA (United States)

Sponsoring Organization:: USDOE Office of Nuclear Energy (NE)

Grant/Contract Number:: NE0000671; CBET1235852; CMMI1264399; DENE0000671; OG-15-011

OSTI ID:: 1533452

Alternate ID(s):: OSTI ID: 1398621

Journal Information:: Acta Materialia, Vol. 122; ISSN 1359-6454

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 55 works

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interface energy
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Title: Interfacial thermal conductance between few to tens of layered-MoS2 and c-Si: Effect of MoS2 thickness

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Title: Interfacial thermal conductance between few to tens of layered-MoS₂ and c-Si: Effect of MoS₂ thickness