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Title: First-principles identification of defect levels in Er-doped GaN

Abstract

Not provided.

Authors:
 [1]
  1. Center for Computationally Assisted Science and Technology, North Dakota State University, Fargo, North Dakota 58108 USA
Publication Date:
Research Org.:
North Dakota State Univ., Fargo, ND (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1533225
DOE Contract Number:  
SC0001717
Resource Type:
Journal Article
Journal Name:
Physica Status Solidi rrl
Additional Journal Information:
Journal Volume: 10; Journal Issue: 12; Journal ID: ISSN 1862-6254
Publisher:
Wiley
Country of Publication:
United States
Language:
English
Subject:
Materials Science; Physics

Citation Formats

Hoang, Khang. First-principles identification of defect levels in Er-doped GaN. United States: N. p., 2016. Web. doi:10.1002/pssr.201600273.
Hoang, Khang. First-principles identification of defect levels in Er-doped GaN. United States. doi:10.1002/pssr.201600273.
Hoang, Khang. Fri . "First-principles identification of defect levels in Er-doped GaN". United States. doi:10.1002/pssr.201600273.
@article{osti_1533225,
title = {First-principles identification of defect levels in Er-doped GaN},
author = {Hoang, Khang},
abstractNote = {Not provided.},
doi = {10.1002/pssr.201600273},
journal = {Physica Status Solidi rrl},
issn = {1862-6254},
number = 12,
volume = 10,
place = {United States},
year = {2016},
month = {10}
}