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Title: Origin of high hole concentrations in Mg-doped GaN films: Origin of high hole concentrations in Mg-doped GaN films

Abstract

Not provided.

Authors:
 [1];  [1];  [1];  [2];  [2];  [2]
  1. Department of Physics, Arizona State University, Tempe AZ 85287-1504 USA
  2. Advanced Semiconductor Technology Facility, School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta GA 30332 USA
Publication Date:
Research Org.:
Arizona State Univ., Tempe, AZ (United States)
Sponsoring Org.:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
OSTI Identifier:
1533224
DOE Contract Number:  
AR0000470
Resource Type:
Journal Article
Journal Name:
Physica Status Solidi B. Basic Solid State Physics
Additional Journal Information:
Journal Volume: 254; Journal Issue: 8; Journal ID: ISSN 0370-1972
Publisher:
Wiley-Blackwell
Country of Publication:
United States
Language:
English
Subject:
Physics

Citation Formats

Fischer, A. M., Wang, S., Ponce, F. A., Gunning, B. P., Fabien, C. A. M., and Doolittle, W. A. Origin of high hole concentrations in Mg-doped GaN films: Origin of high hole concentrations in Mg-doped GaN films. United States: N. p., 2017. Web. doi:10.1002/pssb.201600668.
Fischer, A. M., Wang, S., Ponce, F. A., Gunning, B. P., Fabien, C. A. M., & Doolittle, W. A. Origin of high hole concentrations in Mg-doped GaN films: Origin of high hole concentrations in Mg-doped GaN films. United States. doi:10.1002/pssb.201600668.
Fischer, A. M., Wang, S., Ponce, F. A., Gunning, B. P., Fabien, C. A. M., and Doolittle, W. A. Tue . "Origin of high hole concentrations in Mg-doped GaN films: Origin of high hole concentrations in Mg-doped GaN films". United States. doi:10.1002/pssb.201600668.
@article{osti_1533224,
title = {Origin of high hole concentrations in Mg-doped GaN films: Origin of high hole concentrations in Mg-doped GaN films},
author = {Fischer, A. M. and Wang, S. and Ponce, F. A. and Gunning, B. P. and Fabien, C. A. M. and Doolittle, W. A.},
abstractNote = {Not provided.},
doi = {10.1002/pssb.201600668},
journal = {Physica Status Solidi B. Basic Solid State Physics},
issn = {0370-1972},
number = 8,
volume = 254,
place = {United States},
year = {2017},
month = {4}
}

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