Origin of high hole concentrations in Mg-doped GaN films: Origin of high hole concentrations in Mg-doped GaN films

doi:10.1002/pssb.201600668

Title: Origin of high hole concentrations in Mg-doped GaN films: Origin of high hole concentrations in Mg-doped GaN films

Abstract

Not provided.

Authors:

Fischer, A. M. ^[1]; Wang, S. ^[1]; Ponce, F. A. ^[1]; Gunning, B. P. ^[2]; Fabien, C. A. M. ^[2]; Doolittle, W. A. ^[2]

Department of Physics, Arizona State University, Tempe AZ 85287-1504 USA
Advanced Semiconductor Technology Facility, School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta GA 30332 USA

Publication Date:: 2017-04-18

Research Org.:: Arizona State Univ., Tempe, AZ (United States)

Sponsoring Org.:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

OSTI Identifier:: 1533224

DOE Contract Number:: AR0000470

Resource Type:: Journal Article

Journal Name:: Physica Status Solidi B. Basic Solid State Physics

Additional Journal Information:: Journal Volume: 254; Journal Issue: 8; Journal ID: ISSN 0370-1972

Publisher:: Wiley-Blackwell

Country of Publication:: United States

Language:: English

Subject:: Physics

Citation Formats


                    Fischer, A. M., Wang, S., Ponce, F. A., Gunning, B. P., Fabien, C. A.  M., and Doolittle, W. A. Origin of high hole concentrations in Mg-doped GaN films: Origin of high hole concentrations in Mg-doped GaN films.  United States: N. p., 2017. 
        Web.  doi:10.1002/pssb.201600668.

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                    Fischer, A. M., Wang, S., Ponce, F. A., Gunning, B. P., Fabien, C. A.  M., & Doolittle, W. A. Origin of high hole concentrations in Mg-doped GaN films: Origin of high hole concentrations in Mg-doped GaN films.  United States.  doi:10.1002/pssb.201600668.

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                    Fischer, A. M., Wang, S., Ponce, F. A., Gunning, B. P., Fabien, C. A.  M., and Doolittle, W. A. Tue .  
        "Origin of high hole concentrations in Mg-doped GaN films: Origin of high hole concentrations in Mg-doped GaN films".  United States.  doi:10.1002/pssb.201600668.

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@article{osti_1533224,

  title        = {Origin of high hole concentrations in Mg-doped GaN films: Origin of high hole concentrations in Mg-doped GaN films},

  author       = {Fischer, A. M. and Wang, S. and Ponce, F. A. and Gunning, B. P. and Fabien, C. A.  M. and Doolittle, W. A.},

  abstractNote = {Not provided.},

  doi          = {10.1002/pssb.201600668},

  journal      = {Physica Status Solidi B. Basic Solid State Physics},

  issn         = {0370-1972},

  number       = 8,

  volume       = 254,

  place        = {United States},

  year         = {2017},

  month        = {4}

}

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Journal Article:

DOI: 10.1002/pssb.201600668

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Works referenced in this record:

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Similar Records

Title: Origin of high hole concentrations in Mg-doped GaN films: Origin of high hole concentrations in Mg-doped GaN films

Abstract

Citation Formats

Photoluminescence of Mg-doped p-type GaN and electroluminescence of GaN p-n junction LED journal, January 1991

On p‐ type doping in GaN—acceptor binding energies journal, August 1995

Activation of acceptors in Mg‐doped GaN grown by metalorganic chemical vapor deposition journal, January 1996

Mg‐doped p ‐type GaN grown by reactive molecular beam epitaxy journal, July 1996

Violet luminescence of Mg‐doped GaN journal, March 1973

P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI) journal, December 1989

Nature of the 2.8 eV photoluminescence band in Mg doped GaN journal, March 1998

Donor-acceptor pair recombination in GaN journal, February 1971

THE PREPARATION AND PROPERTIES OF VAPOR‐DEPOSITED SINGLE‐CRYSTAL‐LINE GaN journal, November 1969

The influence of oxygen on the electrical and optical properties of GaN crystals grown by metalorganic vapor phase epitaxy journal, July 1992

Towards the Identification of the Dominant Donor in GaN journal, July 1995

Si- and Ge-Doped GaN Films Grown with GaN Buffer Layers journal, September 1992

Gallium vacancies and the yellow luminescence in GaN journal, July 1996

Observation of Native Ga Vacancies in GaN by Positron Annihilation journal, October 1997

Hole Compensation Mechanism of P-Type GaN Films journal, May 1992

Thermal Annealing Effects on P-Type Mg-Doped GaN Films journal, February 1992

Hydrogenation of p ‐type gallium nitride journal, April 1994

Optical characteristics of p ‐type GaN films grown by plasma‐assisted molecular beam epitaxy journal, October 1996

Theory of doping and defects in III–V nitrides journal, June 1998

Spontaneous Ordering in Bulk GaN:Mg Samples journal, September 1999

Mg-doped GaN: Similar defects in bulk crystals and layers grown on Al2O3 by metal–organic chemical-vapor deposition journal, December 1999

Faceted inversion domain boundary in GaN films doped with Mg journal, October 2000

Light emission and microstructure of Mg-doped AlGaN grown on patterned sapphire journal, January 2003

Incorporation of Mg in GaN grown by plasma-assisted molecular beam epitaxy journal, December 2000

Energetics of Mg incorporation at GaN(0001) and Ga N ( 000 1 ¯ ) surfaces journal, April 2006

Mg doping of GaN grown by plasma-assisted molecular beam epitaxy under nitrogen-rich conditions journal, March 2010

Mechanisms of magnesium incorporation into GaN layers grown by molecular beam epitaxy journal, February 1999

Control of GaN surface morphologies using plasma-assisted molecular beam epitaxy journal, August 2000

Metal modulation epitaxy growth for extremely high hole concentrations above 1019cm−3 in GaN journal, October 2008

Negligible carrier freeze-out facilitated by impurity band conduction in highly p-type GaN journal, August 2012

Theory of Point Defects and Complexes in GaN journal, January 1995

Comprehensive study of the electronic and optical behavior of highly degenerate p-type Mg-doped GaN and AlGaN journal, January 2015

Accurate, short series approximations to Fermi–Dirac integrals of order −1/2, 1/2, 1, 3/2, 2, 5/2, 3, and 7/2 journal, June 1985

Efficient p-type doping of GaN films by plasma-assisted molecular beam epitaxy journal, November 2004

Shallow acceptors in GaN journal, September 2007

Time-resolved cathodoluminescence of Mg-doped GaN journal, October 2008

Photoluminescence of Mg-doped p-type GaN and electroluminescence of GaN p-n junction LED
journal, January 1991

On p‐ type doping in GaN—acceptor binding energies
journal, August 1995

Activation of acceptors in Mg‐doped GaN grown by metalorganic chemical vapor deposition
journal, January 1996

Mg‐doped p ‐type GaN grown by reactive molecular beam epitaxy
journal, July 1996

Violet luminescence of Mg‐doped GaN
journal, March 1973

P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
journal, December 1989

Nature of the 2.8 eV photoluminescence band in Mg doped GaN
journal, March 1998

Donor-acceptor pair recombination in GaN
journal, February 1971

THE PREPARATION AND PROPERTIES OF VAPOR‐DEPOSITED SINGLE‐CRYSTAL‐LINE GaN
journal, November 1969

The influence of oxygen on the electrical and optical properties of GaN crystals grown by metalorganic vapor phase epitaxy
journal, July 1992

Towards the Identification of the Dominant Donor in GaN
journal, July 1995

Si- and Ge-Doped GaN Films Grown with GaN Buffer Layers
journal, September 1992

Gallium vacancies and the yellow luminescence in GaN
journal, July 1996

Observation of Native Ga Vacancies in GaN by Positron Annihilation
journal, October 1997

Hole Compensation Mechanism of P-Type GaN Films
journal, May 1992

Thermal Annealing Effects on P-Type Mg-Doped GaN Films
journal, February 1992

Hydrogenation of p ‐type gallium nitride
journal, April 1994

Optical characteristics of p ‐type GaN films grown by plasma‐assisted molecular beam epitaxy
journal, October 1996

Theory of doping and defects in III–V nitrides
journal, June 1998

Spontaneous Ordering in Bulk GaN:Mg Samples
journal, September 1999

Mg-doped GaN: Similar defects in bulk crystals and layers grown on Al2O3 by metal–organic chemical-vapor deposition
journal, December 1999

Faceted inversion domain boundary in GaN films doped with Mg
journal, October 2000

Light emission and microstructure of Mg-doped AlGaN grown on patterned sapphire
journal, January 2003

Incorporation of Mg in GaN grown by plasma-assisted molecular beam epitaxy
journal, December 2000

Energetics of Mg incorporation at GaN(0001) and $Ga N (000 \bar{1})$ surfaces
journal, April 2006

Mg doping of GaN grown by plasma-assisted molecular beam epitaxy under nitrogen-rich conditions
journal, March 2010

Mechanisms of magnesium incorporation into GaN layers grown by molecular beam epitaxy
journal, February 1999

Control of GaN surface morphologies using plasma-assisted molecular beam epitaxy
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Metal modulation epitaxy growth for extremely high hole concentrations above 1019cm−3 in GaN
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Negligible carrier freeze-out facilitated by impurity band conduction in highly p-type GaN
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Theory of Point Defects and Complexes in GaN
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Comprehensive study of the electronic and optical behavior of highly degenerate p-type Mg-doped GaN and AlGaN
journal, January 2015

Accurate, short series approximations to Fermi–Dirac integrals of order −1/2, 1/2, 1, 3/2, 2, 5/2, 3, and 7/2
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Efficient p-type doping of GaN films by plasma-assisted molecular beam epitaxy
journal, November 2004

Shallow acceptors in GaN
journal, September 2007

Time-resolved cathodoluminescence of Mg-doped GaN
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