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Title: Modeling the potential of screen printed front junction CZ silicon solar cell with tunnel oxide passivated back contact: Screen printed TOPCon front junction Cz Si solar cell

Journal Article · · Progress in Photovoltaics
DOI:https://doi.org/10.1002/pip.2809· OSTI ID:1533204
 [1];  [2];  [2];  [1];  [1];  [1];  [1];  [3]
  1. Georgia Institute of Technology, 777 Atlantic Drive Atlanta GA 30332-0250 USA
  2. Fraunhofer Institute for Solar Energy Systems, Germany
  3. Georgia Institute of Technology, 777 Atlantic Drive Atlanta GA 30332-0250 USA; Suniva Inc., 5765 Peachtree Industrial Blvd. Norcross GA 30092 USA
+ Show Author Affiliations

Not provided.

Research Organization:
Georgia Institute of Technology, Atlanta, GA (United States)
Sponsoring Organization:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
DOE Contract Number:
EE0006336
OSTI ID:
1533204
Journal Information:
Progress in Photovoltaics, Vol. 25, Issue 1; ISSN 1062-7995
Publisher:
Wiley
Country of Publication:
United States
Language:
English

References (26)

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A 720 mV open circuit voltage SiO x : c ‐Si:SiO x double heterostructure solar cell journal December 1985
20.7% efficient ion-implanted large area n -type front junction silicon solar cells with rear point contacts formed by laser opening and physical vapor deposition : 20.7% efficient ion-implanted journal July 2014
Models for numerical device simulations of crystalline silicon solar cells—a review journal July 2011
19.8% efficient “honeycomb” textured multicrystalline and 24.4% monocrystalline silicon solar cells journal October 1998
Simple silicon solar cells featuring an a-Si:H enhanced rear MIS contact journal July 2015
Silicon heterojunction solar cell with passivated hole selective MoO x contact journal March 2014
Towards understanding the characteristics of Ag–Al spiking on boron-doped silicon for solar cells journal March 2016
Excellent passivation of highly doped p-type Si surfaces by the negative-charge-dielectric Al2O3 journal September 2007
A Simple Model Describing the Symmetric <formula formulatype="inline"><tex Notation="TeX">$I\hbox{--}V$</tex></formula> Characteristics of <formula formulatype="inline"><tex Notation="TeX">$\hbox{p}$</tex></formula> Polycrystalline Si/ <formula formulatype="inline"><tex Notation="TeX">$\hbox{n}$</tex></formula> Monocrystalline Si, and <formula formulatype="inline"> <tex Notation="TeX">$\hbox{n}$</tex></formula> Polycrystalline Si/<formula formulatype="inline"><tex Notation="TeX">$\hbox{p}$</tex></formula> Monocrystalline Si Junctions journal May 2014
Passivated rear contacts for high-efficiency n-type Si solar cells providing high interface passivation quality and excellent transport characteristics journal January 2014
Metallization-induced recombination losses of bifacial silicon solar cells: Metallization-induced recombination losses of bifacial silicon solar cells
  • Edler, Alexander; Mihailetchi, Valentin D.; Koduvelikulathu, Lejo J.
  • Progress in Photovoltaics: Research and Applications, Vol. 23, Issue 5 https://doi.org/10.1002/pip.2479
journal February 2014
21.2%-efficient fineline-printed PERC solar cell with 5 busbar front grid: 21.2%-efficient fineline-printed PERC solar cell with 5 busbar front grid journal June 2014
>23% High-Efficiency Tunnel Oxide Junction Bifacial Solar Cell With Electroplated Cu Gridlines journal January 2015
Solar cell efficiency tables (version 43): Solar cell efficiency tables journal December 2013
Ion Implantation for Poly-Si Passivated Back-Junction Back-Contacted Solar Cells journal March 2015
Hole-blocking titanium-oxide/silicon heterojunction and its application to photovoltaics journal May 2013
Charge Carrier Separation in Solar Cells journal January 2015
Numerical Simulation of Carrier-Selective Electron Contacts Featuring Tunnel Oxides journal September 2015
Ion implantation into amorphous Si layers to form carrier-selective contacts for Si solar cells: Ion implantation into amorphous Si layers to form carrier-selective contacts for Si solar cells journal August 2014
Approaching efficiencies above 25% with both sides-contacted silicon solar cells conference June 2015
Ion implanted screen printed N-type solar cell with tunnel oxide passivated back contact conference June 2015
Emitter recombination current densities of boron emitters with silver/aluminum pastes conference June 2014
Quasi-steady-state photoconductance, a new method for solar cell material and device characterization conference January 1996

Cited By (3)

Review of status developments of high-efficiency crystalline silicon solar cells journal February 2018
Screen printed, large area bifacial N-type back junction silicon solar cells with selective phosphorus front surface field and boron doped poly-Si/SiO x passivated rear emitter journal December 2018
Electrical internal quantum efficiency improved by interval doping method journal November 2018

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Energy &amp; Fuels
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