skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Large-Area 2D/3D MoS 2 -MoO 2 Heterostructures with Thermally Stable Exciton and Intriguing Electrical Transport Behaviors

Abstract

Not provided.

Authors:
 [1];  [2];  [1];  [1];  [3];  [1];  [4];  [2];  [5];  [6];  [1]
  1. Department of Electrical and Computer Engineering, University of Nebraska-Lincoln, Lincoln NE 68588-0511 USA
  2. Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln NE 68588-0299 USA; Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln NE 68588-0299 USA
  3. Department of Physics, Boston University, Boston MA 02215 USA
  4. Department of Physics, Boston University, Boston MA 02215 USA; School of Chemical Sciences, University of Auckland, Auckland 1142 New Zealand
  5. School of Mechanical Engineering, Beijing Institute of Technology, Beijing 100081 China
  6. Institut de Chimie de la Matière Condensée de Bordeaux, Avenue du Docteur Albert Schweitzer F-33608 Pessac Cedex France
Publication Date:
Research Org.:
Univ. of Nebraska, Lincoln, NE (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1533054
DOE Contract Number:  
SC0016153
Resource Type:
Journal Article
Journal Name:
Advanced Electronic Materials
Additional Journal Information:
Journal Volume: 3; Journal Issue: 7; Journal ID: ISSN 2199-160X
Publisher:
Wiley
Country of Publication:
United States
Language:
English
Subject:
Science & Technology - Other Topics; Materials Science; Physics

Citation Formats

Li, Dawei, Xiao, Zhiyong, Golgir, Hossein Rabiee, Jiang, Lijia, Singh, Vijay Raj, Keramatnejad, Kamran, Smith, Kevin E., Hong, Xia, Jiang, Lan, Silvain, Jean-Francois, and Lu, Yongfeng. Large-Area 2D/3D MoS 2 -MoO 2 Heterostructures with Thermally Stable Exciton and Intriguing Electrical Transport Behaviors. United States: N. p., 2017. Web. doi:10.1002/aelm.201600335.
Li, Dawei, Xiao, Zhiyong, Golgir, Hossein Rabiee, Jiang, Lijia, Singh, Vijay Raj, Keramatnejad, Kamran, Smith, Kevin E., Hong, Xia, Jiang, Lan, Silvain, Jean-Francois, & Lu, Yongfeng. Large-Area 2D/3D MoS 2 -MoO 2 Heterostructures with Thermally Stable Exciton and Intriguing Electrical Transport Behaviors. United States. doi:10.1002/aelm.201600335.
Li, Dawei, Xiao, Zhiyong, Golgir, Hossein Rabiee, Jiang, Lijia, Singh, Vijay Raj, Keramatnejad, Kamran, Smith, Kevin E., Hong, Xia, Jiang, Lan, Silvain, Jean-Francois, and Lu, Yongfeng. Wed . "Large-Area 2D/3D MoS 2 -MoO 2 Heterostructures with Thermally Stable Exciton and Intriguing Electrical Transport Behaviors". United States. doi:10.1002/aelm.201600335.
@article{osti_1533054,
title = {Large-Area 2D/3D MoS 2 -MoO 2 Heterostructures with Thermally Stable Exciton and Intriguing Electrical Transport Behaviors},
author = {Li, Dawei and Xiao, Zhiyong and Golgir, Hossein Rabiee and Jiang, Lijia and Singh, Vijay Raj and Keramatnejad, Kamran and Smith, Kevin E. and Hong, Xia and Jiang, Lan and Silvain, Jean-Francois and Lu, Yongfeng},
abstractNote = {Not provided.},
doi = {10.1002/aelm.201600335},
journal = {Advanced Electronic Materials},
issn = {2199-160X},
number = 7,
volume = 3,
place = {United States},
year = {2017},
month = {4}
}

Works referenced in this record:

Van der Waals stacked 2D layered materials for optoelectronics
journal, April 2016


Two-dimensional heterostructures: fabrication, characterization, and application
journal, January 2014


Vertical 2D Heterostructures
journal, July 2015


Strong Light-Matter Interactions in Heterostructures of Atomically Thin Films
journal, May 2013


Highly efficient gate-tunable photocurrent generation in vertical heterostructures of layered materials
journal, October 2013


Atomically thin p–n junctions with van der Waals heterointerfaces
journal, August 2014

  • Lee, Chul-Ho; Lee, Gwan-Hyoung; van der Zande, Arend M.
  • Nature Nanotechnology, Vol. 9, Issue 9
  • DOI: 10.1038/nnano.2014.150

A WSe 2 /MoSe 2 heterostructure photovoltaic device
journal, September 2015

  • Flöry, Nikolaus; Jain, Achint; Bharadwaj, Palash
  • Applied Physics Letters, Vol. 107, Issue 12
  • DOI: 10.1063/1.4931621

Two-Step Growth of Two-Dimensional WSe 2 /MoSe 2 Heterostructures
journal, August 2015


Photovoltaic Effect in an Electrically Tunable van der Waals Heterojunction
journal, July 2014

  • Furchi, Marco M.; Pospischil, Andreas; Libisch, Florian
  • Nano Letters, Vol. 14, Issue 8
  • DOI: 10.1021/nl501962c

Graphene/MoS 2 Heterostructures for Ultrasensitive Detection of DNA Hybridisation
journal, May 2014

  • Loan, Phan Thi Kim; Zhang, Wenjing; Lin, Cheng-Te
  • Advanced Materials, Vol. 26, Issue 28
  • DOI: 10.1002/adma.201401084

Chemical Sensing of 2D Graphene/MoS 2 Heterostructure device
journal, July 2015

  • Cho, Byungjin; Yoon, Jongwon; Lim, Sung Kwan
  • ACS Applied Materials & Interfaces, Vol. 7, Issue 30
  • DOI: 10.1021/acsami.5b04541

Valley-polarized exciton dynamics in a 2D semiconductor heterostructure
journal, February 2016


Spintronics with graphene-hexagonal boron nitride van der Waals heterostructures
journal, November 2014

  • Kamalakar, M. Venkata; Dankert, André; Bergsten, Johan
  • Applied Physics Letters, Vol. 105, Issue 21
  • DOI: 10.1063/1.4902814

Nonvolatile Memory Cells Based on MoS 2 /Graphene Heterostructures
journal, March 2013

  • Bertolazzi, Simone; Krasnozhon, Daria; Kis, Andras
  • ACS Nano, Vol. 7, Issue 4
  • DOI: 10.1021/nn3059136

Ultrafast charge transfer in atomically thin MoS2/WS2 heterostructures
journal, August 2014

  • Hong, Xiaoping; Kim, Jonghwan; Shi, Su-Fei
  • Nature Nanotechnology, Vol. 9, Issue 9
  • DOI: 10.1038/nnano.2014.167

The role of collective motion in the ultrafast charge transfer in van der Waals heterostructures
journal, May 2016

  • Wang, Han; Bang, Junhyeok; Sun, Yiyang
  • Nature Communications, Vol. 7, Issue 1
  • DOI: 10.1038/ncomms11504

Interlayer coupling and optoelectronic properties of ultrathin two-dimensional heterostructures based on graphene, MoS 2 and WS 2
journal, January 2015

  • Huo, Nengjie; Wei, Zhongming; Meng, Xiuqing
  • Journal of Materials Chemistry C, Vol. 3, Issue 21
  • DOI: 10.1039/C5TC00698H

Tunable Electrical and Optical Characteristics in Monolayer Graphene and Few-Layer MoS 2 Heterostructure Devices
journal, July 2015


Fundamentals of lateral and vertical heterojunctions of atomically thin materials
journal, January 2016

  • Pant, Anupum; Mutlu, Zafer; Wickramaratne, Darshana
  • Nanoscale, Vol. 8, Issue 7
  • DOI: 10.1039/C5NR08982D

Physical and chemical tuning of two-dimensional transition metal dichalcogenides
journal, January 2015

  • Wang, Haotian; Yuan, Hongtao; Sae Hong, Seung
  • Chemical Society Reviews, Vol. 44, Issue 9
  • DOI: 10.1039/C4CS00287C

The hot pick-up technique for batch assembly of van der Waals heterostructures
journal, June 2016

  • Pizzocchero, Filippo; Gammelgaard, Lene; Jessen, Bjarke S.
  • Nature Communications, Vol. 7, Issue 1
  • DOI: 10.1038/ncomms11894

Vertical and in-plane heterostructures from WS2/MoS2 monolayers
journal, September 2014

  • Gong, Yongji; Lin, Junhao; Wang, Xingli
  • Nature Materials, Vol. 13, Issue 12, p. 1135-1142
  • DOI: 10.1038/nmat4091

Lateral heterojunctions within monolayer MoSe2–WSe2 semiconductors
journal, August 2014

  • Huang, Chunming; Wu, Sanfeng; Sanchez, Ana M.
  • Nature Materials, Vol. 13, Issue 12, p. 1096-1101
  • DOI: 10.1038/nmat4064

Epitaxial growth of a monolayer WSe2-MoS2 lateral p-n junction with an atomically sharp interface
journal, July 2015


Mixed-dimensional van der Waals heterostructures
journal, August 2016

  • Jariwala, Deep; Marks, Tobin J.; Hersam, Mark C.
  • Nature Materials, Vol. 16, Issue 2
  • DOI: 10.1038/nmat4703

Vertical 2D/3D Semiconductor Heterostructures Based on Epitaxial Molybdenum Disulfide and Gallium Nitride
journal, February 2016


Layer-transferred MoS 2 /GaN PN diodes
journal, September 2015

  • Lee, Edwin W.; Lee, Choong Hee; Paul, Pran K.
  • Applied Physics Letters, Vol. 107, Issue 10
  • DOI: 10.1063/1.4930234

Heterojunction Hybrid Devices from Vapor Phase Grown MoS2
journal, June 2014

  • Yim, Chanyoung; O'Brien, Maria; McEvoy, Niall
  • Scientific Reports, Vol. 4, Issue 1
  • DOI: 10.1038/srep05458

A subthermionic tunnel field-effect transistor with an atomically thin channel
journal, September 2015


Light Generation and Harvesting in a van der Waals Heterostructure
journal, March 2014

  • Lopez-Sanchez, Oriol; Alarcon Llado, Esther; Koman, Volodymyr
  • ACS Nano, Vol. 8, Issue 3
  • DOI: 10.1021/nn500480u

3D Band Diagram and Photoexcitation of 2D–3D Semiconductor Heterojunctions
journal, August 2015


Atomically Thin MoS2 A New Direct-Gap Semiconductor
journal, September 2010


The effect of the substrate on the Raman and photoluminescence emission of single-layer MoS2
journal, April 2014


Controlled Synthesis of Highly Crystalline MoS 2 Flakes by Chemical Vapor Deposition
journal, March 2013

  • Wang, Xinsheng; Feng, Hongbin; Wu, Yongmin
  • Journal of the American Chemical Society, Vol. 135, Issue 14
  • DOI: 10.1021/ja4013485

From MoO 3 Nanobelts to MoO 2 Nanorods: Structure Transformation and Electrical Transport
journal, January 2009


Synthesis of Large-Area MoS2 Atomic Layers with Chemical Vapor Deposition
journal, March 2012

  • Lee, Yi-Hsien; Zhang, Xin-Quan; Zhang, Wenjing
  • Advanced Materials, Vol. 24, Issue 17, p. 2320-2325
  • DOI: 10.1002/adma.201104798

A study of single-layer and restacked MoS 2 by X-ray diffraction and X-ray absorption spectroscopy
journal, September 1987

  • Joensen, P.; Crozier, E. D.; Alberding, N.
  • Journal of Physics C: Solid State Physics, Vol. 20, Issue 26
  • DOI: 10.1088/0022-3719/20/26/009

Single-layer MoS2 transistors
journal, January 2011

  • Radisavljevic, B.; Radenovic, A.; Brivio, J.
  • Nature Nanotechnology, Vol. 6, Issue 3, p. 147-150
  • DOI: 10.1038/nnano.2010.279

Multimodal Nonlinear Optical Imaging of MoS 2 and MoS 2 -Based van der Waals Heterostructures
journal, February 2016


Electrical Transport Properties of Single-Layer WS 2
journal, July 2014

  • Ovchinnikov, Dmitry; Allain, Adrien; Huang, Ying-Sheng
  • ACS Nano, Vol. 8, Issue 8
  • DOI: 10.1021/nn502362b

Ordered Mesoporous Metallic MoO 2 Materials with Highly Reversible Lithium Storage Capacity
journal, December 2009

  • Shi, Yifeng; Guo, Bingkun; Corr, Serena A.
  • Nano Letters, Vol. 9, Issue 12
  • DOI: 10.1021/nl902423a

Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition
journal, January 2014

  • Zhu, Wenjuan; Low, Tony; Lee, Yi-Hsien
  • Nature Communications, Vol. 5, Issue 1
  • DOI: 10.1038/ncomms4087

Transport in gapped bilayer graphene: The role of potential fluctuations
journal, August 2010


Effect of SiO2 incorporation on stability and work function of conducting MoO2
journal, February 2006

  • Liang, Y.; Tracy, C.; Weisbrod, E.
  • Applied Physics Letters, Vol. 88, Issue 8
  • DOI: 10.1063/1.2176859

Layer-number-dependent work function of MoS2 nanoflakes
journal, May 2014

  • Choi, SooHo; Shaolin, Zhang; Yang, Woochul
  • Journal of the Korean Physical Society, Vol. 64, Issue 10
  • DOI: 10.3938/jkps.64.1550

Thermally Driven Crossover from Indirect toward Direct Bandgap in 2D Semiconductors: MoSe2 versus MoS2
journal, October 2012

  • Tongay, Sefaattin; Zhou, Jian; Ataca, Can
  • Nano Letters, Vol. 12, Issue 11, p. 5576-5580
  • DOI: 10.1021/nl302584w

Radiative lifetime of free excitons in quantum wells
journal, March 1991

  • Andreani, Lucio Claudio; Tassone, Francesco; Bassani, Franco
  • Solid State Communications, Vol. 77, Issue 9
  • DOI: 10.1016/0038-1098(91)90761-J

Photoluminescence of monolayer MoS 2 on LaAlO 3 and SrTiO 3 substrates
journal, January 2014


Tightly bound trions in monolayer MoS2
journal, December 2012

  • Mak, Kin Fai; He, Keliang; Lee, Changgu
  • Nature Materials, Vol. 12, Issue 3
  • DOI: 10.1038/nmat3505

Electrical control of neutral and charged excitons in a monolayer semiconductor
journal, February 2013

  • Ross, Jason S.; Wu, Sanfeng; Yu, Hongyi
  • Nature Communications, Vol. 4, Issue 1
  • DOI: 10.1038/ncomms2498

Control of valley polarization in monolayer MoS2 by optical helicity
journal, June 2012


Excitons in atomically thin black phosphorus
journal, March 2016


Excitonic interconnects
journal, October 2009


Temperature dependence of semiconductor band gaps
journal, June 1991

  • O’Donnell, K. P.; Chen, X.
  • Applied Physics Letters, Vol. 58, Issue 25
  • DOI: 10.1063/1.104723