Tunable Oxygen Diffusion and Electronic Conduction in SrTiO 3 by Dislocation-Induced Space Charge Fields

Adepalli, Kiran K.; Yang, Jing; Maier, Joachim; Tuller, Harry L.; Yildiz, Bilge

doi:10.1002/adfm.201700243

Title: Tunable Oxygen Diffusion and Electronic Conduction in SrTiO ₃ by Dislocation-Induced Space Charge Fields

Journal Article · Mon Apr 03 00:00:00 EDT 2017 · Advanced Functional Materials

DOI:https://doi.org/10.1002/adfm.201700243· OSTI ID:1533017

^[1]; Yang, Jing ^[2]; Maier, Joachim ^[3]; Tuller, Harry L. ^[2]; Yildiz, Bilge ^[1]

Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Dept. of Nuclear Science and Engineering; Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Dept. of Materials Science and Engineering
Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Dept. of Materials Science and Engineering
Max Planck Inst. for Solid State Research, Stuttgart (Germany)

Plastic strain engineering has been applied to induce controllable changes in electronic and oxygen ion conductivity in oxides by orders of magnitude, without changing their nominal composition. By using SrTiO₃ as a model system of technological importance, and by combining electrical and chemical tracer diffusion experiments with computational modeling, it is revealed that dislocations alter the equilibrium concentration and distribution of electronic and ionic defects. The easier reducibility of the dislocation cores increases the n-type conductivity by 50 times at oxygen pressures below 10^-5 atm at 650 °C. At higher oxygen pressures the p-type conductivity decreases by 50 times and the oxygen diffusion coefficient reduces by three orders of magnitude. The strongly altered electrical and oxygen diffusion properties in SrTiO₃ arise because of the existence of overlapping electrostatic fields around the positively charged dislocation cores. The findings and the approach are broadly important and have the potential for significantly impacting the functionalities of electrochemical and/or electronic applications such as thin film oxide electronics, memristive systems, sensors, micro-solid oxide fuel cells, and catalysts, whose functionalities rely on the concentration and distribution of charged point defects.

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Research Organization:: Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0002633; AC05-00OR22725

OSTI ID:: 1533017

Alternate ID(s):: OSTI ID: 1401061

Journal Information:: Advanced Functional Materials, Vol. 27, Issue 22; ISSN 1616-301X

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 59 works

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Title: Tunable Oxygen Diffusion and Electronic Conduction in SrTiO 3 by Dislocation-Induced Space Charge Fields

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Title: Tunable Oxygen Diffusion and Electronic Conduction in SrTiO ₃ by Dislocation-Induced Space Charge Fields