Regulating Top-Surface Multilayer/Single-Crystal Graphene Growth by “Gettering” Carbon Diffusion at Backside of the Copper Foil

Abidi, Irfan H.; Liu, Yuanyue; Pan, Jie; Tyagi, Abhishek; Zhuang, Minghao; Zhang, Qicheng; Cagang, Aldrine A.; Weng, Lu-Tao; Sheng, Ping; Goddard, William A.; Luo, Zhengtang

doi:10.1002/adfm.201700121

Title: Regulating Top-Surface Multilayer/Single-Crystal Graphene Growth by “Gettering” Carbon Diffusion at Backside of the Copper Foil

Journal Article · Tue Apr 11 00:00:00 EDT 2017 · Advanced Functional Materials

DOI:https://doi.org/10.1002/adfm.201700121· OSTI ID:1533016

Abidi, Irfan H. ^[1]; Liu, Yuanyue ^[2]; Pan, Jie ^[1]; Tyagi, Abhishek ^[1]; Zhuang, Minghao ^[1]; Zhang, Qicheng ^[1]; Cagang, Aldrine A. ^[1]; Weng, Lu-Tao ^[1]; Sheng, Ping ^[1]; Goddard, William A. ^[2]; Luo, Zhengtang ^[1]

Hong Kong Univ. of Science and Technology (Hong Kong)
California Institute of Technology (CalTech), Pasadena, CA (United States)

A unique strategy is reported to constrain the nucleation centers for multilayer graphene (MLG) and, later, single‐crystal graphene domains by gettering carbon source on backside of the flat Cu foil, during chemical vapor deposition. Hitherto, for a flat Cu foil, the top‐surface‐based growth mechanism is emphasized, while overlooking the graphene on the backside. However, the systematic experimental findings indicate a strong correlation between the backside graphene and the nucleation centers on the top‐surface, governed by the carbon diffusion through the bulk Cu. This understanding steers to devise a strategy to mitigate the carbon diffusion to the top‐surface by using a carbon “getter” substrate, such as nickel, on the backside of the Cu foil. Depth profiling of the nickel substrate, along with the density functional theory calculations, verifies the gettering role of the nickel support. The implementation of the backside carbon gettering approach on single‐crystal graphene growth results in lowering the nucleation density by two orders of magnitude. This enables the single‐crystal domains to grow by 6 mm laterally on the untreated Cu foil. Finally, the growth of large‐area polycrystalline single layer graphene, free of unwanted MLG domains, with significantly improved field‐effect mobility of ≈6800 cm ² V ⁻¹ s ⁻¹ is demonstrated.

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Research Organization:: Univ. of Southern California, Los Angeles, CA (United States); Univ. of California, Oakland, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: SC0014607; AC02-05CH11231; DE‐SC0014607; DE‐AC02‐05CH11231

OSTI ID:: 1533016

Alternate ID(s):: OSTI ID: 1400837

Journal Information:: Advanced Functional Materials, Vol. 27, Issue 23; ISSN 1616-301X

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 36 works

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Modular functionalization of crystalline graphene by recombinant proteins: a nanoplatform for probing biomolecules Tyagi, Abhishek; Liu, Xiaotian; Abidi, Irfan Haider Nanoscale, Vol. 10, Issue 47 https://doi.org/10.1039/c8nr06225k	journal	January 2018
Role of the Cu substrate in the growth of ultra-flat crack-free highly-crystalline single-layer graphene Huet, Benjamin; Raskin, Jean-Pierre Nanoscale, Vol. 10, Issue 46 https://doi.org/10.1039/c8nr06817h	journal	January 2018
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Title: Regulating Top-Surface Multilayer/Single-Crystal Graphene Growth by “Gettering” Carbon Diffusion at Backside of the Copper Foil

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