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Title: Pinched hysteresis loop in defect-free ferroelectric materials

Abstract

Not provided.

Authors:
; ; ;
Publication Date:
Research Org.:
Univ. of Arkansas, Fayetteville, AR (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1532932
DOE Contract Number:  
SC0002220
Resource Type:
Journal Article
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 94; Journal Issue: 14; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
Materials Science; Physics

Citation Formats

Xu, Bin, Paillard, Charles, Dkhil, Brahim, and Bellaiche, L. Pinched hysteresis loop in defect-free ferroelectric materials. United States: N. p., 2016. Web. doi:10.1103/physrevb.94.140101.
Xu, Bin, Paillard, Charles, Dkhil, Brahim, & Bellaiche, L. Pinched hysteresis loop in defect-free ferroelectric materials. United States. doi:10.1103/physrevb.94.140101.
Xu, Bin, Paillard, Charles, Dkhil, Brahim, and Bellaiche, L. Sat . "Pinched hysteresis loop in defect-free ferroelectric materials". United States. doi:10.1103/physrevb.94.140101.
@article{osti_1532932,
title = {Pinched hysteresis loop in defect-free ferroelectric materials},
author = {Xu, Bin and Paillard, Charles and Dkhil, Brahim and Bellaiche, L.},
abstractNote = {Not provided.},
doi = {10.1103/physrevb.94.140101},
journal = {Physical Review B},
issn = {2469-9950},
number = 14,
volume = 94,
place = {United States},
year = {2016},
month = {10}
}