Spin current devices and methods of fabrication thereof

Shi, Jing; Li, Junxue; Xu, Yadong; Aldosary, Mohammed; Tang, Chi; Lake, Roger

Spin current devices and methods of fabrication thereof

Patent · 27 March 2018

OSTI ID:1532077

Shi, Jing; Li, Junxue; Xu, Yadong; Aldosary, Mohammed; Tang, Chi; Lake, Roger

Pure spin current devices are provided. The devices include sandwich structures of metal/magnetic insulator/metal. A first current injected in a first metal layer generates a pure spin current. The spin current can be switched between “on” and “off” states by controlling an in-plane magnetization orientation of the magnetic insulator. In the “on” state, the pure spin current is transmitted from the first metal layer to the second metal layer, through the magnetic insulator layer. The pure spin current in the second metal layer induces generation of a second charge current. In the “off” state, the pure spin current is absorbed at the interface between the first metal layer and the metal insulator. Such structures can serve as pure spin current valve devices or provide analog functionality, as rotating the in-plane magnetization provides analog sinusoidal modulation of the spin current.

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Research Organization:: Univ. of California, Oakland, CA (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: SC0012670

Assignee:: The Regents of the University of California (Oakland, CA)

Patent Number(s):: 9,929,338

Application Number:: 15/289,850

OSTI ID:: 1532077

Country of Publication:: United States

Language:: English

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