Room temperature tunneling switches and methods of making and using the same
Patent
·
OSTI ID:1532037
The tunneling channel of a field effect transistor comprising a plurality of tunneling elements contacting a channel substrate. Applying a source-drain voltage of greater than a turn-on voltage produces a source-drain current of greater than about 10 pA. Applying a source-drain voltage of less than a turn-on voltage produces a source-drain current of less than about 10 pA. The turn-on voltage at room temperature is between about 0.1V and about 40V.
- Research Organization:
- Michigan Technological Univ., Houghton, MI (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- FG02-06ER46294
- Assignee:
- Michigan Technological University (Houghton, MI)
- Patent Number(s):
- 9,825,154
- Application Number:
- 14/359,818
- OSTI ID:
- 1532037
- Country of Publication:
- United States
- Language:
- English
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