Transistor having increased breakdown voltage
Patent
·
OSTI ID:1531916
A transistor includes a source finger electrode having a source finger electrode beginning and a source finger electrode end. The transistor also includes a drain finger electrode with a curved drain finger electrode end having an increased radius of curvature. The resulting decreased electric field at the curved drain finger electrode end allows for an increased breakdown voltage and a more robust and reliable transistor.
- Research Organization:
- International Rectifier Corp., El Segundo, CA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AR0000016
- Assignee:
- Infineon Technologies Americas Corp. (El Segundo, CA)
- Patent Number(s):
- 9,379,231
- Application Number:
- 13/749,477
- OSTI ID:
- 1531916
- Resource Relation:
- Patent File Date: 2013-01-24
- Country of Publication:
- United States
- Language:
- English
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