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Title: Lift-off patterning processing employing energetically-stimulated local removal of solid-condensed-gas layers

Patent ·
OSTI ID:1531586

The invention provides a method for forming a patterned material layer on a structure, by condensing a vapor to a solid condensate layer on a surface of the structure and then localized removal of selected regions of the condensate layer by directing a beam of energy at the selected regions, exposing the structure at the selected regions. A material layer is then deposited on top of the solid condensate layer and the exposed structure at the selected regions. Then the solid condensate layer and regions of the material layer that were deposited on the solid condensate layer are removed, leaving a patterned material layer on the structure.

Research Organization:
Harvard Univ., Cambridge, MA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
FG02-01ER45922
Assignee:
President and Fellows of Harvard College (Cambridge, MA)
Patent Number(s):
7,524,431
Application Number:
11/008,438
OSTI ID:
1531586
Resource Relation:
Patent File Date: 2004-12-09
Country of Publication:
United States
Language:
English

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Cited By (6)

Nanotube processing employing solid-condensed-gas-layers patent September 2012
Method of lift-off patterning thin films in situ employing phase change resists patent September 2014
Method of forming organic thin film pattern and method of manufacturing organic light-emitting display device by using the method of forming organic thin film pattern patent October 2012
Patterning by energetically-stimulated local removal of solid-condensed-gas layers and solid state chemical reactions produced with such layers patent August 2011
Method for forming microscopic 3D structures patent December 2013
Lift-off patterning processes employing energetically-stimulated local removal of solid-condensed-gas layers patent July 2012