Pulsed ion beam control of solid state features

Golovchenko, Jene A.; Stein, Derek M.; Li, Jiali

Pulsed ion beam control of solid state features

Patent · 10 October 2006

OSTI ID:1531515

Golovchenko, Jene A.; Stein, Derek M.; Li, Jiali

For controlling a physical dimension of a solid state structural feature, a solid state structure is provided, having a surface and having a structural feature. The structure is exposed to a first periodic flux of ions having a first exposure duty cycle characterized by a first ion exposure duration and a first nonexposure duration for the first duty cycle, and then at a second periodic flux of ions having a second exposure duty cycle characterized by a second ion exposure duration and a second nonexposure duration that is greater than the first nonexposure duration, for the second duty cycle, to cause transport, within the structure including the structure surface, of material of the structure to the structural feature in response to the ion flux exposure to change at least one physical dimension of the feature substantially by locally adding material of the structure to the feature.

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Research Organization:: Harvard College, Cambridge, MA (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: FG02-01ER45922

Assignee:: President and Fellows of Harvard College (Cambridge, MA)

Patent Number(s):: 7,118,657

Application Number:: 10/695,381

OSTI ID:: 1531515

Country of Publication:: United States

Language:: English

References (14)

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Non-uniform SiO2 membranes produced by ion beam-assisted chemical vapor deposition to tune WO3 gas sensor microarrays Goschnick, J.; Frietsch, M.; Schneider, T. Surface and Coatings Technology, Vol. 108-109 https://doi.org/10.1016/S0257-8972(98)00564-7	journal	October 1998
DNA molecules and configurations in a solid-state nanopore microscope Li, Jiali; Gershow, Marc; Stein, Derek Nature Materials, Vol. 2, Issue 9 https://doi.org/10.1038/nmat965	journal	August 2003
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Nonlinear amplitude evolution during spontaneous patterning of ion-bombarded Si(001) Erlebacher, Jonah; Aziz, Michael J.; Chason, Eric Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 18, Issue 1 https://doi.org/10.1116/1.582127	journal	January 2000
Spontaneous Pattern Formation on Ion Bombarded Si(001) Erlebacher, Jonah; Aziz, Michael J.; Chason, Eric Physical Review Letters, Vol. 82, Issue 11 https://doi.org/10.1103/PhysRevLett.82.2330	journal	March 1999
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Ion-Beam Sculpting Time Scales Stein, Derek; Li, Jiali; Golovchenko, Jene A. Physical Review Letters, Vol. 89, Issue 27 https://doi.org/10.1103/PhysRevLett.89.276106	journal	December 2002
A new fabrication process for metallic point contacts Gribov, N. N.; Theeuwen, S. J. C. H.; Caro, J. Microelectronic Engineering, Vol. 35, Issue 1-4 https://doi.org/10.1016/S0167-9317(96)00141-4	journal	February 1997
Characterization of micromachined silicon membranes for immunoisolation and bioseparation applications Desai, Tejal A.; Hansford, Derek; Ferrari, Mauro Journal of Membrane Science, Vol. 159, Issue 1-2 https://doi.org/10.1016/S0376-7388(99)00062-9	journal	July 1999
Giant magnetoresistance of magnetic multilayer point contacts Wellock, K.; Theeuwen, S. J. C. H.; Caro, J. Physical Review B, Vol. 60, Issue 14 https://doi.org/10.1103/PhysRevB.60.10291	journal	October 1999
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Focused ion beam processing for microscale fabrication Walker, J. F.; Moore, D. F.; Whitney, J. T. Microelectronic Engineering, Vol. 30, Issue 1-4 https://doi.org/10.1016/0167-9317(95)00299-5	journal	January 1996
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