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Title: Enhanced neutron detector and electron amplifier structure and a method of fabricating the enhanced neutron detector and electron amplifier structure

Patent ·
OSTI ID:1531402

An enhanced electron amplifier structure includes a substrate configured to amplify a signal of an incident particle by causing a cascade of secondary electron emissions and an enhancement layer configured to increase a sensitivity of the substrate to the incident particle. The enhancement layer is provided on an upper surface of the substrate.

Research Organization:
Argonne National Laboratory (ANL), Argonne, IL (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC02-06CH11357
Assignee:
UChicago Argonne, LLC (Chicago, IL)
Patent Number(s):
10,180,508
Application Number:
15/691,652
OSTI ID:
1531402
Resource Relation:
Patent File Date: 2017-08-30
Country of Publication:
United States
Language:
English

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Image intensifier having an ion barrier with conductive material and method for making the same patent November 2015
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Electron multipliers and radiation detectors patent-application November 2003
Porous Material Neutron Detector patent-application February 2012
Effects of ion barrier film on image noise in generation III image tube conference August 2012
Thermoelectric device with multiple, nanometer scale, elements patent August 2006
Microchannel Plate Devices With Tunable Resistive Films patent-application November 2012
The Research on Preparation Process Optimization of Ion Barrier Film on the Input Side of MCP journal May 2013