Selective nanoscale growth of lattice mismatched materials
Patent
·
OSTI ID:1531367
Exemplary embodiments provide materials and methods of forming high-quality semiconductor devices using lattice-mismatched materials. In one embodiment, a composite film including one or more substantially-single-particle-thick nanoparticle layers can be deposited over a substrate as a nanoscale selective growth mask for epitaxially growing lattice-mismatched materials over the substrate.
- Research Organization:
- STC.UNM, Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE
- Assignee:
- STC.UNM (Albuquerque, NM)
- Patent Number(s):
- 10,109,480
- Application Number:
- 15/599,376
- OSTI ID:
- 1531367
- Country of Publication:
- United States
- Language:
- English
Effect Of Mg, Zn, Si, And O On The Lattice Constant of Gallium Nitride Thin Films
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journal | January 1997 |
Strain-relieved, dislocation-free InxGa1−xAs∕GaAs(001) heterostructure by nanoscale-patterned growth
|
journal | November 2004 |
Lithography-free Nanoscale Patterned Growth of GaAs on Si(001) with Sub-100-nm Silica Nanoparticles by Molecular Beam Epitaxy
|
journal | September 2011 |
New approach to the high quality epitaxial growth of lattice‐mismatched materials
|
journal | July 1986 |
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