Temperature-modulated electronic structure of graphene on SiC: Possible roles of electron-electron interaction and strain
- Pusan National Univ., Busan (South Korea)
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
We have iobserved the electron band structure of graphene epitaxially grown on an SiC substrate using angle-resolved photoemission spectroscopy. The conical energy spectrum of graphene exhibits a minimum slope at ~50 K, which is accompanied by the minimum separation between its two branches. These observations provide a viable route towards the engineering of the electronic properties of graphene using temperature, while the latter suggests a possible evidence of gap engineering via strain induced by the substrate and modulated by temperature.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC); National Research Foundation of Korea (NRF)
- Grant/Contract Number:
- AC02-05CH11231
- OSTI ID:
- 1530310
- Alternate ID(s):
- OSTI ID: 1411480
- Journal Information:
- Applied Physics Letters, Vol. 111, Issue 23; ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Cited by: 1 work
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