Spin dependent resonant electron tunneling through planar graphene barriers
- Univ. of Florida, Gainesville, FL (United States). Dept. of Physics; Univ. of Florida, Gainesville, FL (United States). Quantum Theory Project
- Univ. of Florida, Gainesville, FL (United States). Dept. of Physics
- Univ. of Florida, Gainesville, FL (United States). Dept. of Physics; Univ. of Florida, Gainesville, FL (United States). Quantum Theory Project; Univ. of Florida, Gainesville, FL (United States). Center for Molecular Magnetic Quantum Materials
We study spin-dependent electron transport properties of two dimensional graphene double and triple barrier junctions via first-principles calculations. The double barrier junction consists of two graphene leads, a quantum well of zigzag graphene nanoribbon (ZGNR) in the center, and two vacuum barriers separating the ZGNR from the two leads. Resonant electron tunneling occurs when the energy bands of graphene and ZGNR are well aligned in energy and wavevector. Highly spin-polarized electron transmission arises in such junctions when the two edges of the center ZGNR are in the ferromagnetic configuration. The spin polarization of the electron transmission at the Fermi energy can be tuned by gate voltage. We further investigate the dependence of the electron transmission on the width of the ZGNR, effects on barrier height when replacing vacuum by h-BN, and the consequence of replacing a double barrier by a triple barrier.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). National Energy Research Scientific Computing Center (NERSC)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- DOE Contract Number:
- FG02-02ER45995
- OSTI ID:
- 1529914
- Journal Information:
- Carbon, Vol. 144, Issue C; ISSN 0008-6223
- Country of Publication:
- United States
- Language:
- English
Similar Records
Tuning the band structure, magnetic and transport properties of the zigzag graphene nanoribbons/hexagonal boron nitride heterostructures by transverse electric field
Electric field and substrate–induced modulation of spin-polarized transport in graphene nanoribbons on A3B5 semiconductors