Radiation defect dynamics in 3C -, 4H -, and 6H -SiC studied by pulsed ion beams

Bayu Aji, L. B.; Wallace, J. B.; Kucheyev, S. O.

doi:10.1016/j.nimb.2018.03.026

Title: Radiation defect dynamics in $3 C$ -, $4 H$ -, and $6 H$ -SiC studied by pulsed ion beams

Journal Article · Wed Mar 28 00:00:00 EDT 2018 · Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

DOI:https://doi.org/10.1016/j.nimb.2018.03.026· OSTI ID:1529178

Bayu Aji, L. B. ^[1]; Wallace, J. B. ^[2]; Kucheyev, S. O. ^[1]

Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Texas A & M Univ., College Station, TX (United States). Dept. of Nuclear Engineering

Radiation damage behavior of SiC depends on its lattice structure. Here, we use a pulsed-ion-beam method to study defect interaction dynamics in 6H-SiC and damage buildup in 4H- and 6H-SiC irradiated at 100 °C with 500 keV Ar ions. These results are compared with previously reported data for Ar-ion-irradiated 3C- and 4H-SiC. We find that, for these irradiation conditions, damage buildup in 3C- and 6H-SiC is statistically indistinguishable and is significantly more efficient than in 4H-SiC. Within a stimulated amorphization model, 4H-SiC is described by a reduced amorphization cross-section constant, while the point defect cluster production cross-section is the same (within experimental errors) for the three polytypes studied. Moreover, 4H-SiC exhibits slower defect relaxation dynamics than 3C- and 6H-SiC. These results clearly demonstrate the importance of the lattice structure in damage buildup and defect interaction dynamics in SiC.

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Research Organization:: Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC52-07NA27344

OSTI ID:: 1529178

Report Number(s):: LLNL-JRNL-737622; 890147

Journal Information:: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 435, Issue C; ISSN 0168-583X

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 2 works

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Cited By (1)

Radiation defect dynamics in SiC with pre-existing defects Bayu Aji, L. B.; Wallace, J. B.; Kucheyev, S. O. Journal of Applied Physics, Vol. 125, Issue 23 https://doi.org/10.1063/1.5093640	journal	June 2019