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Title: Radiation defect dynamics in 3 C -, 4 H -, and 6 H -SiC studied by pulsed ion beams

Abstract

Radiation damage behavior of SiC depends on its lattice structure. Here, we use a pulsed-ion-beam method to study defect interaction dynamics in 6H-SiC and damage buildup in 4H- and 6H-SiC irradiated at 100 °C with 500 keV Ar ions. These results are compared with previously reported data for Ar-ion-irradiated 3C- and 4H-SiC. We find that, for these irradiation conditions, damage buildup in 3C- and 6H-SiC is statistically indistinguishable and is significantly more efficient than in 4H-SiC. Within a stimulated amorphization model, 4H-SiC is described by a reduced amorphization cross-section constant, while the point defect cluster production cross-section is the same (within experimental errors) for the three polytypes studied. Moreover, 4H-SiC exhibits slower defect relaxation dynamics than 3C- and 6H-SiC. These results clearly demonstrate the importance of the lattice structure in damage buildup and defect interaction dynamics in SiC.

Authors:
 [1];  [2];  [1]
  1. Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
  2. Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Texas A & M Univ., College Station, TX (United States). Dept. of Nuclear Engineering
Publication Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1529178
Report Number(s):
LLNL-JRNL-737622
Journal ID: ISSN 0168-583X; 890147
Grant/Contract Number:  
AC52-07NA27344
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Additional Journal Information:
Journal Volume: 435; Journal Issue: C; Journal ID: ISSN 0168-583X
Publisher:
Elsevier
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS

Citation Formats

Bayu Aji, L. B., Wallace, J. B., and Kucheyev, S. O. Radiation defect dynamics in 3C -, 4H -, and 6H -SiC studied by pulsed ion beams. United States: N. p., 2018. Web. doi:10.1016/j.nimb.2018.03.026.
Bayu Aji, L. B., Wallace, J. B., & Kucheyev, S. O. Radiation defect dynamics in 3C -, 4H -, and 6H -SiC studied by pulsed ion beams. United States. https://doi.org/10.1016/j.nimb.2018.03.026
Bayu Aji, L. B., Wallace, J. B., and Kucheyev, S. O. Wed . "Radiation defect dynamics in 3C -, 4H -, and 6H -SiC studied by pulsed ion beams". United States. https://doi.org/10.1016/j.nimb.2018.03.026. https://www.osti.gov/servlets/purl/1529178.
@article{osti_1529178,
title = {Radiation defect dynamics in 3C -, 4H -, and 6H -SiC studied by pulsed ion beams},
author = {Bayu Aji, L. B. and Wallace, J. B. and Kucheyev, S. O.},
abstractNote = {Radiation damage behavior of SiC depends on its lattice structure. Here, we use a pulsed-ion-beam method to study defect interaction dynamics in 6H-SiC and damage buildup in 4H- and 6H-SiC irradiated at 100 °C with 500 keV Ar ions. These results are compared with previously reported data for Ar-ion-irradiated 3C- and 4H-SiC. We find that, for these irradiation conditions, damage buildup in 3C- and 6H-SiC is statistically indistinguishable and is significantly more efficient than in 4H-SiC. Within a stimulated amorphization model, 4H-SiC is described by a reduced amorphization cross-section constant, while the point defect cluster production cross-section is the same (within experimental errors) for the three polytypes studied. Moreover, 4H-SiC exhibits slower defect relaxation dynamics than 3C- and 6H-SiC. These results clearly demonstrate the importance of the lattice structure in damage buildup and defect interaction dynamics in SiC.},
doi = {10.1016/j.nimb.2018.03.026},
url = {https://www.osti.gov/biblio/1529178}, journal = {Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms},
issn = {0168-583X},
number = C,
volume = 435,
place = {United States},
year = {2018},
month = {3}
}

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Figures / Tables:

FIG. 1 FIG. 1: Selected depth profiles of relative disorder in (a) 3C-, (b) 4H-, and (c) 6H-SiC irradiated at 100 °C with a pulsed beam of 500 keV Ar ions with F on = 1.9× 10 13 cm −2 s −1, ton = 1 ms, and different t off values givenmore » in the legends (in units of ms). The total fluences used are also shown in the legends. For clarity, only every 10th experimental point is depicted. The vertical dashed line shows the position of the maximum of the nuclear energy loss profile of Ar ions.« less

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Works referencing / citing this record:

Radiation defect dynamics in SiC with pre-existing defects
journal, June 2019


    Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.