Luminescence of defects in the structural transformation of layered tin dichalcogenides
Abstract
Layered tin sulfide semiconductors are both of fundamental interest and attractive for energy conversion applications. Sn sulfides crystallize in several stable bulk phases with different Sn:S ratios (SnS2, Sn2S3, and SnS), which can transform into phases with a lower sulfur concentration by introduction of sulfur vacancies (VS). How this complex behavior affects the optoelectronic properties remains largely unknown but is of key importance for understanding light-matter interactions in this family of layered materials. In this work, we use the capability to induce VS and drive a transformation between few-layer SnS2 and SnS by electron beam irradiation, combined with in-situ cathodoluminescence spectroscopy and ab-initio calculations to probe the role of defects in the luminescence of these materials. In addition to the characteristic band-edge emission of the endpoint structures, our results show emerging luminescence features accompanying the SnS2 to SnS transformation. Comparison with calculations indicates that the most prominent emission in SnS2 with sulfur vacancies is not due to luminescence from a defect level but involves recombination of excitons bound to neutral VS in SnS2. These results provide insight into the intrinsic and defect-related optoelectronic properties of Sn chalcogenide semiconductors.
- Authors:
-
- Univ. of Nebraska, Lincoln, NE (United States)
- Aalto Univ., Otaniemi (Finland)
- Aalto Univ., Otaniemi (Finland); Helmholtz-Zentrum Dresden-Rossendorf, Dresden (Germany); National Univ. of Science and Technology MISiS, Moscow (Russia)
- Chinese Academy of Sciences (CAS), Beijing (China)
- Publication Date:
- Research Org.:
- Univ. of Nebraska, Lincoln, NE (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1527164
- Alternate Identifier(s):
- OSTI ID: 1414972
- Grant/Contract Number:
- SC0016343
- Resource Type:
- Journal Article: Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 111; Journal Issue: 26; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Sutter, P., Komsa, H. -P., Krasheninnikov, A. V., Huang, Y., and Sutter, E. Luminescence of defects in the structural transformation of layered tin dichalcogenides. United States: N. p., 2017.
Web. doi:10.1063/1.5007060.
Sutter, P., Komsa, H. -P., Krasheninnikov, A. V., Huang, Y., & Sutter, E. Luminescence of defects in the structural transformation of layered tin dichalcogenides. United States. https://doi.org/10.1063/1.5007060
Sutter, P., Komsa, H. -P., Krasheninnikov, A. V., Huang, Y., and Sutter, E. 2017.
"Luminescence of defects in the structural transformation of layered tin dichalcogenides". United States. https://doi.org/10.1063/1.5007060. https://www.osti.gov/servlets/purl/1527164.
@article{osti_1527164,
title = {Luminescence of defects in the structural transformation of layered tin dichalcogenides},
author = {Sutter, P. and Komsa, H. -P. and Krasheninnikov, A. V. and Huang, Y. and Sutter, E.},
abstractNote = {Layered tin sulfide semiconductors are both of fundamental interest and attractive for energy conversion applications. Sn sulfides crystallize in several stable bulk phases with different Sn:S ratios (SnS2, Sn2S3, and SnS), which can transform into phases with a lower sulfur concentration by introduction of sulfur vacancies (VS). How this complex behavior affects the optoelectronic properties remains largely unknown but is of key importance for understanding light-matter interactions in this family of layered materials. In this work, we use the capability to induce VS and drive a transformation between few-layer SnS2 and SnS by electron beam irradiation, combined with in-situ cathodoluminescence spectroscopy and ab-initio calculations to probe the role of defects in the luminescence of these materials. In addition to the characteristic band-edge emission of the endpoint structures, our results show emerging luminescence features accompanying the SnS2 to SnS transformation. Comparison with calculations indicates that the most prominent emission in SnS2 with sulfur vacancies is not due to luminescence from a defect level but involves recombination of excitons bound to neutral VS in SnS2. These results provide insight into the intrinsic and defect-related optoelectronic properties of Sn chalcogenide semiconductors.},
doi = {10.1063/1.5007060},
url = {https://www.osti.gov/biblio/1527164},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 26,
volume = 111,
place = {United States},
year = {Wed Dec 27 00:00:00 EST 2017},
month = {Wed Dec 27 00:00:00 EST 2017}
}
Web of Science
Figures / Tables:
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