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Title: Opto-electronic properties of Co-Zn-Ni-O films deposited by RF-sputtering at ambient-temperature

Abstract

Co-Zn-Ni-O thin films were grown on glass at ambient temperature (T S < 65 °C) by co- sputtering from Co 3O 4, ZnO, and NiO targets to determine the structural and opto-electronic properties across the ternary composition space. Compositional domains with spinel, wurtzite rock-salt, and mixed phases were observed, albeit with very weak X-ray diffraction peaks, overall suggesting the likely presence of a co-existent amorphous component. The electrical conductivity had a maximum value of ~35 S/cm that occurs where the optical absorption is also the strongest. The work functions range from 5.0-5.8 eV for all samples, but with no clear composition-based trends. Overall, it appears that optoelectronic properties of the Co-Zn-Ni-O materials are much less sensitive to substrate temperature compared to other p-type oxide semiconductors, resulting in technologically-relevant ambient-temperature-deposited thin films.

Authors:
; ; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1526771
Alternate Identifier(s):
OSTI ID: 1544538
Report Number(s):
NREL/JA-5K00-68962
Journal ID: ISSN 0925-8388; S0925838819319577; PII: S0925838819319577
Grant/Contract Number:  
AC36-08GO23808; AC36-08GO28308
Resource Type:
Journal Article: Published Article
Journal Name:
Journal of Alloys and Compounds
Additional Journal Information:
Journal Name: Journal of Alloys and Compounds Journal Volume: 801 Journal Issue: C; Journal ID: ISSN 0925-8388
Publisher:
Elsevier
Country of Publication:
Netherlands
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; oxide materials; thin films; vapor deposition; electrical transport; optical properties; crystal structure

Citation Formats

Ford, J. C., Zakutayev, A., Ndione, P. F., Sigdel, A. K., Widjonarko, N. E., Parilla, P. A., Van Zeghbroeck, B., Berry, J. J., Ginley, D. S., and Perkins, J. D. Opto-electronic properties of Co-Zn-Ni-O films deposited by RF-sputtering at ambient-temperature. Netherlands: N. p., 2019. Web. doi:10.1016/j.jallcom.2019.05.275.
Ford, J. C., Zakutayev, A., Ndione, P. F., Sigdel, A. K., Widjonarko, N. E., Parilla, P. A., Van Zeghbroeck, B., Berry, J. J., Ginley, D. S., & Perkins, J. D. Opto-electronic properties of Co-Zn-Ni-O films deposited by RF-sputtering at ambient-temperature. Netherlands. doi:10.1016/j.jallcom.2019.05.275.
Ford, J. C., Zakutayev, A., Ndione, P. F., Sigdel, A. K., Widjonarko, N. E., Parilla, P. A., Van Zeghbroeck, B., Berry, J. J., Ginley, D. S., and Perkins, J. D. Sun . "Opto-electronic properties of Co-Zn-Ni-O films deposited by RF-sputtering at ambient-temperature". Netherlands. doi:10.1016/j.jallcom.2019.05.275.
@article{osti_1526771,
title = {Opto-electronic properties of Co-Zn-Ni-O films deposited by RF-sputtering at ambient-temperature},
author = {Ford, J. C. and Zakutayev, A. and Ndione, P. F. and Sigdel, A. K. and Widjonarko, N. E. and Parilla, P. A. and Van Zeghbroeck, B. and Berry, J. J. and Ginley, D. S. and Perkins, J. D.},
abstractNote = {Co-Zn-Ni-O thin films were grown on glass at ambient temperature (TS < 65 °C) by co- sputtering from Co3O4, ZnO, and NiO targets to determine the structural and opto-electronic properties across the ternary composition space. Compositional domains with spinel, wurtzite rock-salt, and mixed phases were observed, albeit with very weak X-ray diffraction peaks, overall suggesting the likely presence of a co-existent amorphous component. The electrical conductivity had a maximum value of ~35 S/cm that occurs where the optical absorption is also the strongest. The work functions range from 5.0-5.8 eV for all samples, but with no clear composition-based trends. Overall, it appears that optoelectronic properties of the Co-Zn-Ni-O materials are much less sensitive to substrate temperature compared to other p-type oxide semiconductors, resulting in technologically-relevant ambient-temperature-deposited thin films.},
doi = {10.1016/j.jallcom.2019.05.275},
journal = {Journal of Alloys and Compounds},
issn = {0925-8388},
number = C,
volume = 801,
place = {Netherlands},
year = {2019},
month = {9}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1016/j.jallcom.2019.05.275

Figures / Tables:

Fig. 1 Fig. 1: (a) Representative measured XRD patterns from the different detectable phases observed. (b) Calculated reference spectra for the different structures from the ICDD database. Co3O4 (PDF card 00-042-1467), NiO (PDF card 00-044-1159), and ZnO (PDF card 00-036-1451).

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Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.