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Title: Arsenic doped Cd-rich CdTe: equilibrium doping limit and long lifetime for high open-circuit voltage solar cells greater than 900 mV

Journal Article · · Applied Physics Express
 [1];  [1];  [1]; ORCiD logo [2];  [3]
  1. Univ. of Miyazaki, Miyazaki (Japan)
  2. National Renewable Energy Lab. (NREL), Golden, CO (United States)
  3. Univ. of Utah, Salt Lake City, UT (United States)

The combination of group-V element doping and Cd-rich composition is the most promising current strategy for maximizing p-type doping while preserving long lifetime. In this study, we carefully measure the equilibrium p-type doping limit for As-doped Cd-rich CdTe single crystals and demonstrate a doping limit in the low 1017 cm–3 range upon slow cooling. Here, we present evidence for self-compensation with rapidly decreasing doping efficiency per added As above 5 × 1016 cm–3, yet we also demonstrate CdTe with >1017 cm–3 hole concentration and bulk lifetime >30 ns. Such crystals allow As-doped CdTe photovoltaic devices with open-circuit voltage exceeding 900 mV.

Research Organization:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
Grant/Contract Number:
AC36-08GO28308
OSTI ID:
1526454
Report Number(s):
NREL/JA-5900-74157
Journal Information:
Applied Physics Express, Vol. 12, Issue 8; ISSN 1882-0778
Publisher:
Japan Society of Applied PhysicsCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 12 works
Citation information provided by
Web of Science

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Figures / Tables (5)