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Title: Arsenic doped Cd-rich CdTe: equilibrium doping limit and long lifetime for high open-circuit voltage solar cells greater than 900 mV

Abstract

The combination of group-V element doping and Cd-rich composition is the most promising current strategy for maximizing p-type doping while preserving long lifetime. In this study, we carefully measure the equilibrium p-type doping limit for As-doped Cd-rich CdTe single crystals and demonstrate a doping limit in the low 10 17 cm –3 range upon slow cooling. Here, we present evidence for self-compensation with rapidly decreasing doping efficiency per added As above 5 × 10 16 cm –3, yet we also demonstrate CdTe with >10 17 cm –3 hole concentration and bulk lifetime >30 ns. Such crystals allow As-doped CdTe photovoltaic devices with open-circuit voltage exceeding 900 mV.

Authors:
 [1];  [1];  [1]; ORCiD logo [2];  [3]
  1. Univ. of Miyazaki, Miyazaki (Japan)
  2. National Renewable Energy Lab. (NREL), Golden, CO (United States)
  3. Univ. of Utah, Salt Lake City, UT (United States)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
OSTI Identifier:
1526454
Report Number(s):
NREL/JA-5900-74157
Journal ID: ISSN 1882-0778
Grant/Contract Number:  
AC36-08GO28308
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Applied Physics Express
Additional Journal Information:
Journal Volume: 12; Journal Issue: 8; Journal ID: ISSN 1882-0778
Publisher:
Japan Society of Applied Physics
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; open-circuit voltage; power conversion efficiency; thin film CdTe photovoltaic devices

Citation Formats

Nagaoka, Akira, Nishioka, Kensuke, Yoshino, Kenji, Kuciauskas, Darius, and Scarpulla, Michael A. Arsenic doped Cd-rich CdTe: equilibrium doping limit and long lifetime for high open-circuit voltage solar cells greater than 900 mV. United States: N. p., 2019. Web. doi:10.7567/1882-0786/ab27fb.
Nagaoka, Akira, Nishioka, Kensuke, Yoshino, Kenji, Kuciauskas, Darius, & Scarpulla, Michael A. Arsenic doped Cd-rich CdTe: equilibrium doping limit and long lifetime for high open-circuit voltage solar cells greater than 900 mV. United States. https://doi.org/10.7567/1882-0786/ab27fb
Nagaoka, Akira, Nishioka, Kensuke, Yoshino, Kenji, Kuciauskas, Darius, and Scarpulla, Michael A. Mon . "Arsenic doped Cd-rich CdTe: equilibrium doping limit and long lifetime for high open-circuit voltage solar cells greater than 900 mV". United States. https://doi.org/10.7567/1882-0786/ab27fb. https://www.osti.gov/servlets/purl/1526454.
@article{osti_1526454,
title = {Arsenic doped Cd-rich CdTe: equilibrium doping limit and long lifetime for high open-circuit voltage solar cells greater than 900 mV},
author = {Nagaoka, Akira and Nishioka, Kensuke and Yoshino, Kenji and Kuciauskas, Darius and Scarpulla, Michael A.},
abstractNote = {The combination of group-V element doping and Cd-rich composition is the most promising current strategy for maximizing p-type doping while preserving long lifetime. In this study, we carefully measure the equilibrium p-type doping limit for As-doped Cd-rich CdTe single crystals and demonstrate a doping limit in the low 1017 cm–3 range upon slow cooling. Here, we present evidence for self-compensation with rapidly decreasing doping efficiency per added As above 5 × 1016 cm–3, yet we also demonstrate CdTe with >1017 cm–3 hole concentration and bulk lifetime >30 ns. Such crystals allow As-doped CdTe photovoltaic devices with open-circuit voltage exceeding 900 mV.},
doi = {10.7567/1882-0786/ab27fb},
url = {https://www.osti.gov/biblio/1526454}, journal = {Applied Physics Express},
issn = {1882-0778},
number = 8,
volume = 12,
place = {United States},
year = {2019},
month = {7}
}

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Works referenced in this record:

Dependence of the Minority-Carrier Lifetime on the Stoichiometry of CdTe Using Time-Resolved Photoluminescence and First-Principles Calculations
journal, August 2013


First-principles study of roles of Cu and Cl in polycrystalline CdTe
journal, January 2016


CdTe solar cells with open-circuit voltage breaking the 1 V barrier
journal, February 2016


Enhanced p-type dopability of P and As in CdTe using non-equilibrium thermal processing
journal, July 2015


Phosphorus Diffusion Mechanisms and Deep Incorporation in Polycrystalline and Single-Crystalline CdTe
journal, May 2016


Experimental and theoretical comparison of Sb, As, and P diffusion mechanisms and doping in CdTe
journal, January 2018


Self-compensation in arsenic doping of CdTe
journal, July 2017


p-type doping efficiency in CdTe: Influence of second phase formation
journal, April 2018


Overcoming Carrier Concentration Limits in Polycrystalline CdTe Thin Films with In Situ Doping
journal, September 2018


Long‐lifetime photoconductivity effect in n ‐type GaAlAs
journal, September 1977


Growth and characterization of Arsenic doped CdTe single crystals grown by Cd-solvent traveling-heater method
journal, June 2017


Doping properties of cadmium-rich arsenic-doped CdTe single crystals: Evidence of metastable AX behavior
journal, December 2017


High p-type doping, mobility, and photocarrier lifetime in arsenic-doped CdTe single crystals
journal, May 2018


Minority Carrier Lifetime Analysis in the Bulk of Thin-Film Absorbers Using Subbandgap (Two-Photon) Excitation
journal, October 2013


Understanding arsenic incorporation in CdTe with atom probe tomography
journal, August 2018


Intrinsic surface passivation of CdTe
journal, October 2015


Radiative and interfacial recombination in CdTe heterostructures
journal, December 2014


Carrier density and lifetime for different dopants in single-crystal and polycrystalline CdTe
journal, November 2016


Time-resolved photoluminescence studies of CdTe solar cells
journal, September 2003


The roles of carrier concentration and interface, bulk, and grain-boundary recombination for 25% efficient CdTe solar cells
journal, June 2017


Solar cell efficiency tables (Version 53)
journal, December 2018

  • Green, Martin A.; Hishikawa, Yoshihiro; Dunlop, Ewan D.
  • Progress in Photovoltaics: Research and Applications, Vol. 27, Issue 1
  • https://doi.org/10.1002/pip.3102

A comprehensive picture of Cu doping in CdTe solar cells
journal, November 2013