Arsenic doped Cd-rich CdTe: equilibrium doping limit and long lifetime for high open-circuit voltage solar cells greater than 900 mV

doi:https://doi.org/10.7567/1882-0786/ab27fb

Title: Arsenic doped Cd-rich CdTe: equilibrium doping limit and long lifetime for high open-circuit voltage solar cells greater than 900 mV

Abstract

The combination of group-V element doping and Cd-rich composition is the most promising current strategy for maximizing p-type doping while preserving long lifetime. In this study, we carefully measure the equilibrium p-type doping limit for As-doped Cd-rich CdTe single crystals and demonstrate a doping limit in the low 10 ¹⁷ cm ^–3 range upon slow cooling. Here, we present evidence for self-compensation with rapidly decreasing doping efficiency per added As above 5 × 10 ¹⁶ cm ^–3, yet we also demonstrate CdTe with >10 ¹⁷ cm ^–3 hole concentration and bulk lifetime >30 ns. Such crystals allow As-doped CdTe photovoltaic devices with open-circuit voltage exceeding 900 mV.

Authors:

Nagaoka, Akira ^[1]; Nishioka, Kensuke ^[1]; Yoshino, Kenji ^[1];

^[2]; Scarpulla, Michael A. ^[3]

Univ. of Miyazaki, Miyazaki (Japan)
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Univ. of Utah, Salt Lake City, UT (United States)

Publication Date:: 2019-07-08

Research Org.:: National Renewable Energy Lab. (NREL), Golden, CO (United States)

Sponsoring Org.:: USDOE Office of Energy Efficiency and Renewable Energy (EERE)

OSTI Identifier:: 1526454

Report Number(s):: NREL/JA-5900-74157
Journal ID: ISSN 1882-0778

Grant/Contract Number:: AC36-08GO28308

Resource Type:: Journal Article: Accepted Manuscript

Journal Name:: Applied Physics Express

Additional Journal Information:: Journal Volume: 12; Journal Issue: 8; Journal ID: ISSN 1882-0778

Publisher:: Japan Society of Applied Physics

Country of Publication:: United States

Language:: English

Subject:: 14 SOLAR ENERGY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; open-circuit voltage; power conversion efficiency; thin film CdTe photovoltaic devices

Citation Formats


                    Nagaoka, Akira, Nishioka, Kensuke, Yoshino, Kenji, Kuciauskas, Darius, and Scarpulla, Michael A. Arsenic doped Cd-rich CdTe: equilibrium doping limit and long lifetime for high open-circuit voltage solar cells greater than 900 mV.  United States: N. p., 2019. 
        Web.  doi:10.7567/1882-0786/ab27fb.

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                    Nagaoka, Akira, Nishioka, Kensuke, Yoshino, Kenji, Kuciauskas, Darius, & Scarpulla, Michael A. Arsenic doped Cd-rich CdTe: equilibrium doping limit and long lifetime for high open-circuit voltage solar cells greater than 900 mV.  United States.  https://doi.org/10.7567/1882-0786/ab27fb

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                    Nagaoka, Akira, Nishioka, Kensuke, Yoshino, Kenji, Kuciauskas, Darius, and Scarpulla, Michael A. Mon .  
        "Arsenic doped Cd-rich CdTe: equilibrium doping limit and long lifetime for high open-circuit voltage solar cells greater than 900 mV".  United States.  https://doi.org/10.7567/1882-0786/ab27fb.  https://www.osti.gov/servlets/purl/1526454.

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@article{osti_1526454,

  title        = {Arsenic doped Cd-rich CdTe: equilibrium doping limit and long lifetime for high open-circuit voltage solar cells greater than 900 mV},

  author       = {Nagaoka, Akira and Nishioka, Kensuke and Yoshino, Kenji and Kuciauskas, Darius and Scarpulla, Michael A.},

  abstractNote = {The combination of group-V element doping and Cd-rich composition is the most promising current strategy for maximizing p-type doping while preserving long lifetime. In this study, we carefully measure the equilibrium p-type doping limit for As-doped Cd-rich CdTe single crystals and demonstrate a doping limit in the low 1017 cm–3 range upon slow cooling. Here, we present evidence for self-compensation with rapidly decreasing doping efficiency per added As above 5 × 1016 cm–3, yet we also demonstrate CdTe with >1017 cm–3 hole concentration and bulk lifetime >30 ns. Such crystals allow As-doped CdTe photovoltaic devices with open-circuit voltage exceeding 900 mV.},

  doi          = {10.7567/1882-0786/ab27fb},

  url          = {https://www.osti.gov/biblio/1526454},
  journal      = {Applied Physics Express},

  issn         = {1882-0778},

  number       = 8,

  volume       = 12,

  place        = {United States},

  year         = {2019},

  month        = {7}

}

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Works referenced in this record:

Chemical trends of defect formation and doping limit in II-VI semiconductors: The case of CdTe
journal, October 2002

Wei, Su-Huai; Zhang, S. B.
Physical Review B, Vol. 66, Issue 15
https://doi.org/10.1103/PhysRevB.66.155211

Dependence of the Minority-Carrier Lifetime on the Stoichiometry of CdTe Using Time-Resolved Photoluminescence and First-Principles Calculations
journal, August 2013

Ma, Jie; Kuciauskas, Darius; Albin, David
Physical Review Letters, Vol. 111, Issue 6, Article No. 067402
https://doi.org/10.1103/PhysRevLett.111.067402

First-principles study of roles of Cu and Cl in polycrystalline CdTe
journal, January 2016

Yang, Ji-Hui; Yin, Wan-Jian; Park, Ji-Sang
Journal of Applied Physics, Vol. 119, Issue 4
https://doi.org/10.1063/1.4940722

CdTe solar cells with open-circuit voltage breaking the 1 V barrier
journal, February 2016

Burst, J. M.; Duenow, J. N.; Albin, D. S.
Nature Energy, Vol. 1, Issue 3
https://doi.org/10.1038/nenergy.2016.15

Enhanced p-type dopability of P and As in CdTe using non-equilibrium thermal processing
journal, July 2015

Yang, Ji-Hui; Yin, Wan-Jian; Park, Ji-Sang
Journal of Applied Physics, Vol. 118, Issue 2
https://doi.org/10.1063/1.4926748

Phosphorus Diffusion Mechanisms and Deep Incorporation in Polycrystalline and Single-Crystalline CdTe
journal, May 2016

Colegrove, Eric; Harvey, Steven P.; Yang, Ji-Hui
Physical Review Applied, Vol. 5, Issue 5
https://doi.org/10.1103/PhysRevApplied.5.054014

Experimental and theoretical comparison of Sb, As, and P diffusion mechanisms and doping in CdTe
journal, January 2018

Colegrove, E.; Yang, J-H; Harvey, S. P.
Journal of Physics D: Applied Physics, Vol. 51, Issue 7
https://doi.org/10.1088/1361-6463/aaa67e

Self-compensation in arsenic doping of CdTe
journal, July 2017

Ablekim, Tursun; Swain, Santosh K.; Yin, Wan-Jian
Scientific Reports, Vol. 7, Issue 1
https://doi.org/10.1038/s41598-017-04719-0

p-type doping efficiency in CdTe: Influence of second phase formation
journal, April 2018

McCoy, Jedidiah J.; Swain, Santosh K.; Sieber, John R.
Journal of Applied Physics, Vol. 123, Issue 16
https://doi.org/10.1063/1.5002144

Overcoming Carrier Concentration Limits in Polycrystalline CdTe Thin Films with In Situ Doping
journal, September 2018

McCandless, Brian E.; Buchanan, Wayne A.; Thompson, Christopher P.
Scientific Reports, Vol. 8, Issue 1
https://doi.org/10.1038/s41598-018-32746-y

Long‐lifetime photoconductivity effect in n ‐type GaAlAs
journal, September 1977

Nelson, R. J.
Applied Physics Letters, Vol. 31, Issue 5
https://doi.org/10.1063/1.89696

Trapping characteristics and a donor-complex ( $DX$ ) model for the persistent-photoconductivity trapping center in Te-doped ${Al}_{x} {Ga}_{1 - x} As$
journal, January 1979

Lang, D. V.; Logan, R. A.; Jaros, M.
Physical Review B, Vol. 19, Issue 2
https://doi.org/10.1103/PhysRevB.19.1015

Growth and characterization of Arsenic doped CdTe single crystals grown by Cd-solvent traveling-heater method
journal, June 2017

Nagaoka, Akira; Han, Kyu-Bum; Misra, Sudhajit
Journal of Crystal Growth, Vol. 467
https://doi.org/10.1016/j.jcrysgro.2017.03.002

Doping properties of cadmium-rich arsenic-doped CdTe single crystals: Evidence of metastable AX behavior
journal, December 2017

Nagaoka, Akira; Kuciauskas, Darius; Scarpulla, Michael A.
Applied Physics Letters, Vol. 111, Issue 23
https://doi.org/10.1063/1.4999011

High p-type doping, mobility, and photocarrier lifetime in arsenic-doped CdTe single crystals
journal, May 2018

Nagaoka, Akira; Kuciauskas, Darius; McCoy, Jedidiah
Applied Physics Letters, Vol. 112, Issue 19
https://doi.org/10.1063/1.5029450

Minority Carrier Lifetime Analysis in the Bulk of Thin-Film Absorbers Using Subbandgap (Two-Photon) Excitation
journal, October 2013

Kuciauskas, Darius; Kanevce, Ana; Burst, James M.
IEEE Journal of Photovoltaics, Vol. 3, Issue 4
https://doi.org/10.1109/JPHOTOV.2013.2270354

Understanding arsenic incorporation in CdTe with atom probe tomography
journal, August 2018

Burton, G. L.; Diercks, D. R.; Ogedengbe, O. S.
Solar Energy Materials and Solar Cells, Vol. 182
https://doi.org/10.1016/j.solmat.2018.02.023

Intrinsic surface passivation of CdTe
journal, October 2015

Reese, M. O.; Perkins, C. L.; Burst, J. M.
Journal of Applied Physics, Vol. 118, Issue 15
https://doi.org/10.1063/1.4933186

Radiative and interfacial recombination in CdTe heterostructures
journal, December 2014

Swartz, C. H.; Edirisooriya, M.; LeBlanc, E. G.
Applied Physics Letters, Vol. 105, Issue 22
https://doi.org/10.1063/1.4902926

Carrier density and lifetime for different dopants in single-crystal and polycrystalline CdTe
journal, November 2016

Burst, James M.; Farrell, Stuart B.; Albin, David S.
APL Materials, Vol. 4, Issue 11
https://doi.org/10.1063/1.4966209

Time-resolved photoluminescence studies of CdTe solar cells
journal, September 2003

Metzger, W. K.; Albin, D.; Levi, D.
Journal of Applied Physics, Vol. 94, Issue 5, p. 3549-3555
https://doi.org/10.1063/1.1597974

The roles of carrier concentration and interface, bulk, and grain-boundary recombination for 25% efficient CdTe solar cells
journal, June 2017

Kanevce, A.; Reese, M. O.; Barnes, T. M.
Journal of Applied Physics, Vol. 121, Issue 21
https://doi.org/10.1063/1.4984320

Solar cell efficiency tables (Version 53)
journal, December 2018

Green, Martin A.; Hishikawa, Yoshihiro; Dunlop, Ewan D.
Progress in Photovoltaics: Research and Applications, Vol. 27, Issue 1
https://doi.org/10.1002/pip.3102

A comprehensive picture of Cu doping in CdTe solar cells
journal, November 2013

Perrenoud, J.; Kranz, L.; Gretener, C.
Journal of Applied Physics, Vol. 114, Issue 17
https://doi.org/10.1063/1.4828484

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Similar Records

Title: Arsenic doped Cd-rich CdTe: equilibrium doping limit and long lifetime for high open-circuit voltage solar cells greater than 900 mV

Abstract

Citation Formats

Chemical trends of defect formation and doping limit in II-VI semiconductors: The case of CdTe journal, October 2002

Dependence of the Minority-Carrier Lifetime on the Stoichiometry of CdTe Using Time-Resolved Photoluminescence and First-Principles Calculations journal, August 2013

First-principles study of roles of Cu and Cl in polycrystalline CdTe journal, January 2016

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Phosphorus Diffusion Mechanisms and Deep Incorporation in Polycrystalline and Single-Crystalline CdTe journal, May 2016

Experimental and theoretical comparison of Sb, As, and P diffusion mechanisms and doping in CdTe journal, January 2018

Self-compensation in arsenic doping of CdTe journal, July 2017

p-type doping efficiency in CdTe: Influence of second phase formation journal, April 2018

Overcoming Carrier Concentration Limits in Polycrystalline CdTe Thin Films with In Situ Doping journal, September 2018

Long‐lifetime photoconductivity effect in n ‐type GaAlAs journal, September 1977

Trapping characteristics and a donor-complex ( DX ) model for the persistent-photoconductivity trapping center in Te-doped Al x Ga 1 − x As journal, January 1979

Growth and characterization of Arsenic doped CdTe single crystals grown by Cd-solvent traveling-heater method journal, June 2017

Doping properties of cadmium-rich arsenic-doped CdTe single crystals: Evidence of metastable AX behavior journal, December 2017

High p-type doping, mobility, and photocarrier lifetime in arsenic-doped CdTe single crystals journal, May 2018

Minority Carrier Lifetime Analysis in the Bulk of Thin-Film Absorbers Using Subbandgap (Two-Photon) Excitation journal, October 2013

Understanding arsenic incorporation in CdTe with atom probe tomography journal, August 2018

Intrinsic surface passivation of CdTe journal, October 2015

Radiative and interfacial recombination in CdTe heterostructures journal, December 2014

Carrier density and lifetime for different dopants in single-crystal and polycrystalline CdTe journal, November 2016

Time-resolved photoluminescence studies of CdTe solar cells journal, September 2003

The roles of carrier concentration and interface, bulk, and grain-boundary recombination for 25% efficient CdTe solar cells journal, June 2017

Solar cell efficiency tables (Version 53) journal, December 2018

A comprehensive picture of Cu doping in CdTe solar cells journal, November 2013

Chemical trends of defect formation and doping limit in II-VI semiconductors: The case of CdTe
journal, October 2002

Dependence of the Minority-Carrier Lifetime on the Stoichiometry of CdTe Using Time-Resolved Photoluminescence and First-Principles Calculations
journal, August 2013

First-principles study of roles of Cu and Cl in polycrystalline CdTe
journal, January 2016

CdTe solar cells with open-circuit voltage breaking the 1 V barrier
journal, February 2016

Enhanced p-type dopability of P and As in CdTe using non-equilibrium thermal processing
journal, July 2015

Phosphorus Diffusion Mechanisms and Deep Incorporation in Polycrystalline and Single-Crystalline CdTe
journal, May 2016

Experimental and theoretical comparison of Sb, As, and P diffusion mechanisms and doping in CdTe
journal, January 2018

Self-compensation in arsenic doping of CdTe
journal, July 2017

p-type doping efficiency in CdTe: Influence of second phase formation
journal, April 2018

Overcoming Carrier Concentration Limits in Polycrystalline CdTe Thin Films with In Situ Doping
journal, September 2018

Long‐lifetime photoconductivity effect in n ‐type GaAlAs
journal, September 1977

Trapping characteristics and a donor-complex ( $DX$ ) model for the persistent-photoconductivity trapping center in Te-doped ${Al}_{x} {Ga}_{1 - x} As$
journal, January 1979

Growth and characterization of Arsenic doped CdTe single crystals grown by Cd-solvent traveling-heater method
journal, June 2017

Doping properties of cadmium-rich arsenic-doped CdTe single crystals: Evidence of metastable AX behavior
journal, December 2017

High p-type doping, mobility, and photocarrier lifetime in arsenic-doped CdTe single crystals
journal, May 2018

Minority Carrier Lifetime Analysis in the Bulk of Thin-Film Absorbers Using Subbandgap (Two-Photon) Excitation
journal, October 2013

Understanding arsenic incorporation in CdTe with atom probe tomography
journal, August 2018

Intrinsic surface passivation of CdTe
journal, October 2015

Radiative and interfacial recombination in CdTe heterostructures
journal, December 2014

Carrier density and lifetime for different dopants in single-crystal and polycrystalline CdTe
journal, November 2016

Time-resolved photoluminescence studies of CdTe solar cells
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