Visible- and solar-blind photodetectors using AlGaN high electron mobility transistors with a nanodot-based floating gate

Armstrong, Andrew M.; Klein, Brianna A.; Allerman, Andrew A.; Baca, Albert G.; Crawford, Mary H.; Podkaminer, Jacob; Perez, Carlos R.; Siegal, Michael P.; Douglas, Erica A.; Abate, Vincent M.; Leonard, Francois

doi:10.1364/PRJ.7.000B24

Title: Visible- and solar-blind photodetectors using AlGaN high electron mobility transistors with a nanodot-based floating gate

Journal Article · Wed May 22 00:00:00 EDT 2019 · Photonics Research

DOI:https://doi.org/10.1364/PRJ.7.000B24· OSTI ID:1514767

; Klein, Brianna A.; Allerman, Andrew A.; Baca, Albert G.; Crawford, Mary H.; Podkaminer, Jacob; Perez, Carlos R.; Siegal, Michael P.; Douglas, Erica A.; Abate, Vincent M.;

AlGaN-channel high electron mobility transistors (HEMTs) were operated as visible- and solar-blind photodetectors by using GaN nanodots as an optically active floating gate. The effect of the floating gate was large enough to switch an HEMT from the off-state in the dark to an on-state under illumination. This opto-electronic response achieved responsivity >10⁸ A/W at room temperature while allowing HEMTs to be electrically biased in the off-state for low dark current and low DC power dissipation. The influence of GaN nanodot distance from the HEMT channel on the dynamic range of the photodetector was investigated, along with the responsivity and temporal response of the floating gate HEMT as a function of optical intensity. The absorption threshold was shown to be controlled by the AlN mole fraction of the HEMT channel layer, thus enabling the same device design to be tuned for either visible- or solar-blind detection.

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia National Lab. (SNL-CA), Livermore, CA (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000; NA0003525

OSTI ID:: 1514767

Alternate ID(s):: OSTI ID: 1526222

Report Number(s):: SAND-2019-5989J

Journal Information:: Photonics Research, Journal Name: Photonics Research Vol. 7 Journal Issue: 6; ISSN 2327-9125

Publisher:: Optical Society of America (OSA)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 10 works

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