skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Temperature and Excitation Dependence of Recombination in CIGS Thin Films with High Spatial Resolution

Abstract

Alkali post-deposition treatments significantly improve the performance of CuInGaSe2 (CIGS) devices, but there is still room for improvement. Here, we investigate the effects of potassium fluoride alkali post-deposition treatment on the defect chemistry and recombination at grain boundaries and grain interiors using temperature- and injection-dependent cathodoluminescence (CL) spectrum imaging. We study CIGS thin films grown on alkali-free sapphire substrates to isolate the effects of alkali treatment from alkali metals that can diffuse from standard soda-lime glass substrates. We find that alkali treatment affects the energy and temperature dependence of the luminescence peaks, as well as the defect activation energies. CL spectrum images reveal that the luminescence transitions at grain boundaries have a distinct power dependence after alkali treatment and substantially different defect chemistry. This work shows that temperatureand injection-dependence CL spectrum images can provide unique insight into the defect chemistry and recombination behavior of CIGS thin films.

Authors:
 [1];  [1];  [2];  [2];  [2];  [1]
  1. National Renewable Energy Laboratory (NREL), Golden, CO (United States)
  2. National Institute of Advanced Industrial Science and Technology
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
OSTI Identifier:
1525761
Report Number(s):
NREL/CP-5K00-73033
DOE Contract Number:  
AC36-08GO28308
Resource Type:
Conference
Resource Relation:
Conference: Presented at SPIE OPTO, 2-7 February 2019, San Francisco, California
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; cathodoluminescence; CIGS; recombination; excitation dependence; temperature dependence

Citation Formats

Guthrey, Harvey L, Moseley, John, Nishinaga, Jiro, Shibata, Hajime, Takahashi, Hideki, and Al-Jassim, Mowafak M. Temperature and Excitation Dependence of Recombination in CIGS Thin Films with High Spatial Resolution. United States: N. p., 2019. Web. doi:10.1117/12.2508802.
Guthrey, Harvey L, Moseley, John, Nishinaga, Jiro, Shibata, Hajime, Takahashi, Hideki, & Al-Jassim, Mowafak M. Temperature and Excitation Dependence of Recombination in CIGS Thin Films with High Spatial Resolution. United States. doi:10.1117/12.2508802.
Guthrey, Harvey L, Moseley, John, Nishinaga, Jiro, Shibata, Hajime, Takahashi, Hideki, and Al-Jassim, Mowafak M. Wed . "Temperature and Excitation Dependence of Recombination in CIGS Thin Films with High Spatial Resolution". United States. doi:10.1117/12.2508802.
@article{osti_1525761,
title = {Temperature and Excitation Dependence of Recombination in CIGS Thin Films with High Spatial Resolution},
author = {Guthrey, Harvey L and Moseley, John and Nishinaga, Jiro and Shibata, Hajime and Takahashi, Hideki and Al-Jassim, Mowafak M},
abstractNote = {Alkali post-deposition treatments significantly improve the performance of CuInGaSe2 (CIGS) devices, but there is still room for improvement. Here, we investigate the effects of potassium fluoride alkali post-deposition treatment on the defect chemistry and recombination at grain boundaries and grain interiors using temperature- and injection-dependent cathodoluminescence (CL) spectrum imaging. We study CIGS thin films grown on alkali-free sapphire substrates to isolate the effects of alkali treatment from alkali metals that can diffuse from standard soda-lime glass substrates. We find that alkali treatment affects the energy and temperature dependence of the luminescence peaks, as well as the defect activation energies. CL spectrum images reveal that the luminescence transitions at grain boundaries have a distinct power dependence after alkali treatment and substantially different defect chemistry. This work shows that temperatureand injection-dependence CL spectrum images can provide unique insight into the defect chemistry and recombination behavior of CIGS thin films.},
doi = {10.1117/12.2508802},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {2}
}

Conference:
Other availability
Please see Document Availability for additional information on obtaining the full-text document. Library patrons may search WorldCat to identify libraries that hold this conference proceeding.

Save / Share:

Works referenced in this record:

Photovoltaic materials: Present efficiencies and future challenges
journal, April 2016


Single-crystal Cu(In,Ga)Se 2 solar cells grown on GaAs substrates
journal, July 2018

  • Nishinaga, Jiro; Nagai, Takehiko; Sugaya, Takeyoshi
  • Applied Physics Express, Vol. 11, Issue 8
  • DOI: 10.7567/APEX.11.082302

Spatially resolved photoluminescence measurements on Cu(In,Ga)Se2 thin films
journal, February 2002


What limits the efficiency of chalcopyrite solar cells?
journal, June 2011


The importance of band tail recombination on current collection and open-circuit voltage in CZTSSe solar cells
journal, July 2016

  • Moore, James E.; Hages, Charles J.; Agrawal, Rakesh
  • Applied Physics Letters, Vol. 109, Issue 2
  • DOI: 10.1063/1.4955402

Edge luminescence of direct-gap semiconductors
journal, March 1981


The Role of Spatial Potential Fluctuations in the Shape of the PL Bands of Multinary Semiconductor Compounds
journal, January 1999


Reduced potential fluctuation in a surface sulfurized Cu(InGa)Se 2
journal, July 2018

  • Kim, Shinho; Aihara, Taketo; Nishinaga, Jiro
  • Japanese Journal of Applied Physics, Vol. 57, Issue 8
  • DOI: 10.7567/JJAP.57.085702

Radiative recombination via intrinsic defects in CuxGaySe2
journal, April 2001

  • Bauknecht, A.; Siebentritt, S.; Albert, J.
  • Journal of Applied Physics, Vol. 89, Issue 8
  • DOI: 10.1063/1.1357786

Spatially Resolved Recombination Analysis of CuIn x Ga 1-x Se 2 Absorbers With Alkali Postdeposition Treatments
journal, November 2018


Growth and photoluminescence of GaSb and Ga 1 x In x As y Sb 1 y grown on GaSb substrates by liquid-phase electroepitaxy
journal, January 1993


Excitation-power dependence of the near-band-edge photoluminescence of semiconductors
journal, April 1992


Photoluminescence studies of CuInSe2
journal, June 1996