Method to fabricate quantum dot field-effect transistors without bias-stress effect
Patent
·
OSTI ID:1525017
Disclosed herein are embodiments of a method to form quantum dot field-effect transistors (QD FETs) having little to no bias-stress effect. Bias-stress effect can be reduced or eliminated through, as an example, the use of a gas or liquid to remove ligands and/or reduce charge trapping on the QD FETs, followed by deposition of an inorganic or organic matrix around the QDs in the FET.
- Research Organization:
- Univ. of California, Oakland, CA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- SC0003904
- Assignee:
- The Regents of the University of California (Oakland, CA)
- Patent Number(s):
- 10,224,422
- Application Number:
- 14/973,522
- OSTI ID:
- 1525017
- Country of Publication:
- United States
- Language:
- English
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