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Title: Hybrid CMOS-MEMS devices adapted for high-temperature operation and method for their manufacture

Abstract

A silicon carbide based MOS integrated circuit is monolithically integrated with a suspended piezoelectric aluminum nitride member to form a high-temperature-capable hybrid MEMS-over-MOS structure. In the integrated structure, a post-MOS passivation layer of silicon carbide is deposited over the MOS passivation and overlain by a structural layer of the MEMS device. Electrical contact to refractory metal conductors of the MOS integrated circuit is provided by tungsten vias that are formed so as to pass vertically through the structural layer and the post-MOS passivation layer.

Inventors:
; ;
Publication Date:
Research Org.:
National Technology & Engineering Solutions of Sandia, LLC, Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1525005
Patent Number(s):
10,214,415
Application Number:
15/910,531
Assignee:
National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM)
DOE Contract Number:  
NA0003525
Resource Type:
Patent
Resource Relation:
Patent File Date: 2018-03-02
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING

Citation Formats

Griffin, Benjamin, Habermehl, Scott D., and Clews, Peggy J. Hybrid CMOS-MEMS devices adapted for high-temperature operation and method for their manufacture. United States: N. p., 2019. Web.
Griffin, Benjamin, Habermehl, Scott D., & Clews, Peggy J. Hybrid CMOS-MEMS devices adapted for high-temperature operation and method for their manufacture. United States.
Griffin, Benjamin, Habermehl, Scott D., and Clews, Peggy J. Tue . "Hybrid CMOS-MEMS devices adapted for high-temperature operation and method for their manufacture". United States. https://www.osti.gov/servlets/purl/1525005.
@article{osti_1525005,
title = {Hybrid CMOS-MEMS devices adapted for high-temperature operation and method for their manufacture},
author = {Griffin, Benjamin and Habermehl, Scott D. and Clews, Peggy J.},
abstractNote = {A silicon carbide based MOS integrated circuit is monolithically integrated with a suspended piezoelectric aluminum nitride member to form a high-temperature-capable hybrid MEMS-over-MOS structure. In the integrated structure, a post-MOS passivation layer of silicon carbide is deposited over the MOS passivation and overlain by a structural layer of the MEMS device. Electrical contact to refractory metal conductors of the MOS integrated circuit is provided by tungsten vias that are formed so as to pass vertically through the structural layer and the post-MOS passivation layer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {2}
}

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