Large-Area Junction Damage in Potential-Induced Degradation of c-Si Solar Modules
Abstract
We report a large area of millimeter-scale p-n junction damage caused by potential-induced degradation (PID) of lab-stressed crystalline-Si modules. Kelvin probe force microscopy results show electrical potential change across the junction, and a recovery was observed after heat treatment. Electron-beam induced current results support the large-area damage instead of local shunts and a much lower collected current for the affected junction area. Furthermore, secondaryion mass spectrometry indicates that the large-area damage correlates with sodium contamination. The consistent results shed new light on PID mechanisms to investigate that are essentially different than the widely reported local junction shunts.
- Authors:
-
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Colorado School of Mines
- Publication Date:
- Research Org.:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE)
- OSTI Identifier:
- 1523597
- Report Number(s):
- NREL/CP-5K00-67779
- DOE Contract Number:
- AC36-08GO28308
- Resource Type:
- Conference
- Resource Relation:
- Conference: Presented at the 2017 IEEE 44th Photovoltaic Specialist Conference (PVSC), 25-30 June 2017, Washington, D.C.
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY; 36 MATERIALS SCIENCE; potential-induced degradation; junction damage; large area; recovery; microscopy
Citation Formats
Xiao, Chuanxiao, Jiang, Chun Sheng, Johnston, Steven, Harvey, Steven P, Hacke, Peter L, Gorman, Brian, and Al-Jassim, Mowafak M. Large-Area Junction Damage in Potential-Induced Degradation of c-Si Solar Modules. United States: N. p., 2018.
Web. doi:10.1109/PVSC.2017.8366015.
Xiao, Chuanxiao, Jiang, Chun Sheng, Johnston, Steven, Harvey, Steven P, Hacke, Peter L, Gorman, Brian, & Al-Jassim, Mowafak M. Large-Area Junction Damage in Potential-Induced Degradation of c-Si Solar Modules. United States. https://doi.org/10.1109/PVSC.2017.8366015
Xiao, Chuanxiao, Jiang, Chun Sheng, Johnston, Steven, Harvey, Steven P, Hacke, Peter L, Gorman, Brian, and Al-Jassim, Mowafak M. 2018.
"Large-Area Junction Damage in Potential-Induced Degradation of c-Si Solar Modules". United States. https://doi.org/10.1109/PVSC.2017.8366015.
@article{osti_1523597,
title = {Large-Area Junction Damage in Potential-Induced Degradation of c-Si Solar Modules},
author = {Xiao, Chuanxiao and Jiang, Chun Sheng and Johnston, Steven and Harvey, Steven P and Hacke, Peter L and Gorman, Brian and Al-Jassim, Mowafak M},
abstractNote = {We report a large area of millimeter-scale p-n junction damage caused by potential-induced degradation (PID) of lab-stressed crystalline-Si modules. Kelvin probe force microscopy results show electrical potential change across the junction, and a recovery was observed after heat treatment. Electron-beam induced current results support the large-area damage instead of local shunts and a much lower collected current for the affected junction area. Furthermore, secondaryion mass spectrometry indicates that the large-area damage correlates with sodium contamination. The consistent results shed new light on PID mechanisms to investigate that are essentially different than the widely reported local junction shunts.},
doi = {10.1109/PVSC.2017.8366015},
url = {https://www.osti.gov/biblio/1523597},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Nov 05 00:00:00 EST 2018},
month = {Mon Nov 05 00:00:00 EST 2018}
}
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