Analysis of GaInP Solar Cells Grown by Hydride Vapor Phase Epitaxy
We analyzed the performance of a simple n-on-p GaInP solar cell grown without surface passivation but with a back reflector by dynamic hydride vapor phase epitaxy (DHYPE). We employed a thin emitter because the lack of surface passivation limited collection in that layer. We obtained a maximum internal quantum efficiency of nearly 95% by using 1 x 10^16 cm^-3 base doping. This device exhibited an open circuit voltage (VOC) of 1.27 V, short circuit current (JSC) of 12.6 mA/cm^2 , a fill factor (FF) of 79.3%, and 12.8% efficiency. Limits on cell performance predominantly come from VOC and FF. A Suns-VOC analysis of this cell indicates that 5.5% (absolute) of the FF is lost to series resistance, which stems from a high contact resistance. Another 5.5% of FF loss results from elevated dark current, leading to non-ideal diode behavior. This behavior implies that improvement in bulk material quality through reduction in concentrations of non-radiative defects will improve cell performance.
- Research Organization:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Organization:
- U.S. Department of Energy, Advanced Research Projects Agency-Energy (ARPA-E); USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
- DOE Contract Number:
- AC36-08GO28308
- OSTI ID:
- 1523587
- Report Number(s):
- NREL/CP-5900-67840
- Resource Relation:
- Conference: Presented at the 2017 IEEE 44th Photovoltaic Specialist Conference (PVSC), 25-30 June 2017, Washington, D.C.
- Country of Publication:
- United States
- Language:
- English
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