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Title: Suppressing Secondary Grain Growth in Sc0.125Al0.875N Using a CMOS Compatible Electrode.

Abstract

Abstract not provided.

Authors:
; ; ; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1518544
Report Number(s):
SAND2018-5498C
663350
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Proposed for presentation at the 2018 NMAVS Symposium and Exhibition held May 22, 2018 in Albuquerque, New Mexico.
Country of Publication:
United States
Language:
English

Citation Formats

Esteves, Giovanni, Berg, Morgann, Henry, Michael David, Griffin, Benjamin, and Douglas, Erica Ann. Suppressing Secondary Grain Growth in Sc0.125Al0.875N Using a CMOS Compatible Electrode.. United States: N. p., 2018. Web.
Esteves, Giovanni, Berg, Morgann, Henry, Michael David, Griffin, Benjamin, & Douglas, Erica Ann. Suppressing Secondary Grain Growth in Sc0.125Al0.875N Using a CMOS Compatible Electrode.. United States.
Esteves, Giovanni, Berg, Morgann, Henry, Michael David, Griffin, Benjamin, and Douglas, Erica Ann. Tue . "Suppressing Secondary Grain Growth in Sc0.125Al0.875N Using a CMOS Compatible Electrode.". United States. https://www.osti.gov/servlets/purl/1518544.
@article{osti_1518544,
title = {Suppressing Secondary Grain Growth in Sc0.125Al0.875N Using a CMOS Compatible Electrode.},
author = {Esteves, Giovanni and Berg, Morgann and Henry, Michael David and Griffin, Benjamin and Douglas, Erica Ann},
abstractNote = {Abstract not provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {5}
}

Conference:
Other availability
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