Single Crystalline Substrates for III-V Growth via Exfoliation of Bulk Single Crystals
To enable widespread deployment of GaAs PV, the cost of single crystal substrates must be dramatically reduced. Here we present an indium-bonded exfoliation technique that produces substrates for III-V growth by exfoliation of macroscopic single crystals. Beginning with a search of available substrates, we identified several model materials that are lattice matched to III-Vs. Bi 2 Se 3 single crystals were grown via the Bridgman technique in order to demonstrate our exfoliation method. From a centimeter diameter single crystal, up to eleven substrates with RMS roughness of 0.04 nm in a 20x20 micron region were exfoliated using this method. Large area AFM scans determined a terrace length of 72 um between step edges. Thicknesses were determined to range from 40-160 um using cross-sectional SEM. This exfoliation technique opens the door to the widespread study of layered materials as epitaxial substrates.
- Research Organization:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S), SuNLaMP Program
- DOE Contract Number:
- AC36-08GO28308
- OSTI ID:
- 1515384
- Report Number(s):
- NREL/CP-5K00-67820
- Resource Relation:
- Conference: Presented at the 2017 IEEE 44th Photovoltaic Specialist Conference (PVSC), 25-30 June 2017, Washington, D.C.
- Country of Publication:
- United States
- Language:
- English
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