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Title: Nanometer-Scale Carrier Imaging of Potential-Induced Degradation in c-Si Solar Cells

Abstract

We report on nm-resolution imaging of chargecarrier distribution around local potential-induced degradation (PID) defects using scanning capacitance microscopy. We imaged cross sections of heavily field-degraded module areas as cored out and selected by mm-scale photoluminescence imaging. Localized areas with abnormal carrier behavior or junction damage were found: the apparent n-type carrier extends vertically into the absorber to ~1-2 um from the cell surface, and laterally in similar lengths; in defect-free areas, the n-type carrier extends ~0.5 um, which is consistent with the junction depth. For comparison, we also investigated areas of the same module exhibiting less PID stress, and did not find any such heavily damaged junction area. Instead, we found slightly abnormal carrier behavior, where the carrier-type inversion in the absorber did not occur, but the p-type carrier concentration changed slightly in a much smaller lateral length of ~300 nm. These nanoelectrical findings suggest that the existing extended defects, which may not be significantly harmful to cell performance, were changed by PID to heavily damaged junction areas.

Authors:
 [1];  [1];  [1];  [1];  [1];  [2];  [2];  [3]
  1. National Renewable Energy Laboratory (NREL), Golden, CO (United States)
  2. Trina Solar Inc.
  3. Chinese Academy of Science
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
OSTI Identifier:
1515382
Report Number(s):
NREL/CP-5K00-67773
DOE Contract Number:  
AC36-08GO28308
Resource Type:
Conference
Resource Relation:
Conference: Presented at the 2017 IEEE 44th Photovoltaic Specialist Conference (PVSC), 25-30 June 2017, Washington, D.C.
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 47 OTHER INSTRUMENTATION; c-Si solar cell; potential-induced degradation; scanning capacitance microscopy; nanoelectrical property

Citation Formats

Jiang, Chun Sheng, Xiao, Chuanxiao, Moutinho, Helio R, Johnston, Steven, Al-Jassim, Mowafak M, Yang, X., Chen, Y., and Ye, J. Nanometer-Scale Carrier Imaging of Potential-Induced Degradation in c-Si Solar Cells. United States: N. p., 2018. Web. doi:10.1109/PVSC.2017.8366039.
Jiang, Chun Sheng, Xiao, Chuanxiao, Moutinho, Helio R, Johnston, Steven, Al-Jassim, Mowafak M, Yang, X., Chen, Y., & Ye, J. Nanometer-Scale Carrier Imaging of Potential-Induced Degradation in c-Si Solar Cells. United States. doi:10.1109/PVSC.2017.8366039.
Jiang, Chun Sheng, Xiao, Chuanxiao, Moutinho, Helio R, Johnston, Steven, Al-Jassim, Mowafak M, Yang, X., Chen, Y., and Ye, J. Mon . "Nanometer-Scale Carrier Imaging of Potential-Induced Degradation in c-Si Solar Cells". United States. doi:10.1109/PVSC.2017.8366039.
@article{osti_1515382,
title = {Nanometer-Scale Carrier Imaging of Potential-Induced Degradation in c-Si Solar Cells},
author = {Jiang, Chun Sheng and Xiao, Chuanxiao and Moutinho, Helio R and Johnston, Steven and Al-Jassim, Mowafak M and Yang, X. and Chen, Y. and Ye, J.},
abstractNote = {We report on nm-resolution imaging of chargecarrier distribution around local potential-induced degradation (PID) defects using scanning capacitance microscopy. We imaged cross sections of heavily field-degraded module areas as cored out and selected by mm-scale photoluminescence imaging. Localized areas with abnormal carrier behavior or junction damage were found: the apparent n-type carrier extends vertically into the absorber to ~1-2 um from the cell surface, and laterally in similar lengths; in defect-free areas, the n-type carrier extends ~0.5 um, which is consistent with the junction depth. For comparison, we also investigated areas of the same module exhibiting less PID stress, and did not find any such heavily damaged junction area. Instead, we found slightly abnormal carrier behavior, where the carrier-type inversion in the absorber did not occur, but the p-type carrier concentration changed slightly in a much smaller lateral length of ~300 nm. These nanoelectrical findings suggest that the existing extended defects, which may not be significantly harmful to cell performance, were changed by PID to heavily damaged junction areas.},
doi = {10.1109/PVSC.2017.8366039},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {11}
}

Conference:
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