GaLnAsP Solar Cells Grown by Hydride Vapor Phase Epitaxy for One-Sun & Low-Concentration III-V/Si Photovoltaics
Dynamic hydride vapor phase epitaxy (D-HVPE) has recently reemerged as a low-cost alternative to metalorganic chemical vapor deposition (MOCVD) for the growth of highefficiency III-V solar cells. Quaternary GaInAsP solar cells in the bandgap range of ~1.6-1.8 eV are promising top-cell candidates for III-V/Si tandem solar cells. In this work, we report on the development of lattice-matched GaInAsP (Eg~1.66 eV) solar cells grown via low-cost HVPE at very high growth rates of ~0.7 um/min (~42 um/h). We demonstrate for the first time HVPE grown passivated GaInAsP homojunction solar cells that show substantial improvement in the short-wavelength photoresponse attributed to the incorporation of a GaInP window layer. The heterointerfaces in these multilayer devices were characterized by transmission electron microscopy. The best device achieved a certified one-sun efficiency of 18.7% under AM1.5G, demonstrating the viability of HVPE to grow multilayered structures comprising ternary and quaternary alloys. This work represents a promising step towards low-cost III-V/Si tandem photovoltaics with one-sun efficiencies exceeding 30%.
- Research Organization:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
- DOE Contract Number:
- AC36-08GO28308
- OSTI ID:
- 1515370
- Report Number(s):
- NREL/CP-5900-67843
- Resource Relation:
- Conference: Presented at the 2017 IEEE 44th Photovoltaic Specialist Conference (PVSC), 25-30 June 2017, Washington, D.C.
- Country of Publication:
- United States
- Language:
- English
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