Conductivity Tuning via Doping with Electron Donating and Withdrawing Molecules in Perovskite CsPbI3 Nanocrystal Films

Gaulding, Elizabeth; Hao, Ji; Kang, Hyun Suk; Link, Elisa M.; Habisreutinger, Severin N.; Zhao, Qian; Hazarika, Abhijit; Sercel, Peter C.; Luther, Joseph M.; Blackburn, Jeffrey L.

doi:10.1002/adma.201902250

Title: Conductivity Tuning via Doping with Electron Donating and Withdrawing Molecules in Perovskite CsPbI₃ Nanocrystal Films

Journal Article · Fri May 10 00:00:00 EDT 2019 · Advanced Materials

DOI:https://doi.org/10.1002/adma.201902250· OSTI ID:1514850

Gaulding, Elizabeth ^[1]; Hao, Ji ^[1]; Kang, Hyun Suk ^[1]; Link, Elisa M. ^[1];

^[1]; Zhao, Qian ^[1]; Hazarika, Abhijit ^[1]; Sercel, Peter C. ^[2];

^[1];

^[1]

National Renewable Energy Lab. (NREL), Golden, CO (United States)
California Inst. of Technology (CalTech), Pasadena, CA (United States)

Doping of semiconductors enables fine control over the excess charge carriers, and thus the overall electronic properties, crucial to many technologies. Controlled doping in lead-halide perovskite semiconductors has thus far proven to be difficult. However, lower dimensional perovskites such as nanocrystals, with their high surface-area-to-volume ratio, are particularly well-suited for doping via ground-state molecular charge transfer. Here, the tunability of the electronic properties of perovskite nanocrystal arrays is detailed using physically adsorbed molecular dopants. Incorporation of the dopant molecules into electronically coupled CsPbI₃ nanocrystal arrays is confirmed via infrared and photoelectron spectroscopies. Untreated CsPbI₃ nanocrystal films are found to be slightly p-type with increasing conductivity achieved by incorporating the electron-accepting dopant 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F₄TCNQ) and decreasing conductivity for the electron-donating dopant benzyl viologen. Time-resolved spectroscopic measurements reveal the time scales of Auger-mediated recombination in the presence of excess electrons or holes. Microwave conductance and field-effect transistor measurements demonstrate that both the local and long-range hole mobility are improved by F4TCNQ doping of the nanocrystal arrays. The improved hole mobility in photoexcited p-type arrays leads to a pronounced enhancement in phototransistors.

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Research Organization:: Energy Frontier Research Centers (EFRC) (United States). Center for Hybrid Organic-Inorganic Semiconductors for Energy (CHOISE); National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22), Solar Photochemistry Program; USDOE National Renewable Energy Laboratory (NREL), Laboratory Directed Research and Development (LDRD) Program

Grant/Contract Number:: AC36-08GO28308; AC36‐08GO28308

OSTI ID:: 1514850

Alternate ID(s):: OSTI ID: 1511887

Report Number(s):: NREL/JA-5K00-73496

Journal Information:: Advanced Materials, Vol. 31, Issue 27; ISSN 0935-9648

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 62 works

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Title: Conductivity Tuning via Doping with Electron Donating and Withdrawing Molecules in Perovskite CsPbI3 Nanocrystal Films

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Title: Conductivity Tuning via Doping with Electron Donating and Withdrawing Molecules in Perovskite CsPbI₃ Nanocrystal Films