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Title: Design Optimization of GaN Vertical Power Diodes and Comparison to Si and SiC.

Abstract

Abstract not provided.

Authors:
;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1513658
Report Number(s):
SAND2018-0879C
660205
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Proposed for presentation at the Wide Bandgap Power Devices and Applications (WiPDA) held October 30 - November 1, 2017 in Albuquerque, New Mexico, United States.
Country of Publication:
United States
Language:
English

Citation Formats

Flicker, Jack David, and Kaplar, Robert. Design Optimization of GaN Vertical Power Diodes and Comparison to Si and SiC.. United States: N. p., 2018. Web. doi:10.1109/WiPDA.2017.8170498.
Flicker, Jack David, & Kaplar, Robert. Design Optimization of GaN Vertical Power Diodes and Comparison to Si and SiC.. United States. doi:10.1109/WiPDA.2017.8170498.
Flicker, Jack David, and Kaplar, Robert. Mon . "Design Optimization of GaN Vertical Power Diodes and Comparison to Si and SiC.". United States. doi:10.1109/WiPDA.2017.8170498. https://www.osti.gov/servlets/purl/1513658.
@article{osti_1513658,
title = {Design Optimization of GaN Vertical Power Diodes and Comparison to Si and SiC.},
author = {Flicker, Jack David and Kaplar, Robert},
abstractNote = {Abstract not provided.},
doi = {10.1109/WiPDA.2017.8170498},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {1}
}

Conference:
Other availability
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