Perfect Strain Relaxation in Metamorphic Epitaxial Aluminum on Silicon through Primary and Secondary Interface Misfit Dislocation Arrays

Liu, Xiang-Yang; Arslan, Ilke; Arey, Bruce W.; Hackley, Justin; Lordi, Vincenzo; Richardson, Christopher J.  K.

doi:10.1021/acsnano.8b02065

Title: Perfect Strain Relaxation in Metamorphic Epitaxial Aluminum on Silicon through Primary and Secondary Interface Misfit Dislocation Arrays

Journal Article · Fri Jun 22 00:00:00 EDT 2018 · ACS Nano

DOI:https://doi.org/10.1021/acsnano.8b02065· OSTI ID:1459823

Liu, Xiang-Yang ^[1]; Arslan, Ilke ^[2]; Arey, Bruce W. ^[2]; Hackley, Justin ^[3];

^[4];

^[3]

Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Pacific Northwest National Lab. (PNNL), Richland, WA (United States). Physical Sciences Division
Univ. of Maryland, College Park, MD (United States). Lab. for Physical Sciences
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States). Materials Science Division

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Research Organization:: Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC); USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC52-06NA25396; AC05-76RL01830; AC52-07NA27344; AC02-06CH11357

OSTI ID:: 1459823

Alternate ID(s):: OSTI ID: 1475459; OSTI ID: 1513099

Report Number(s):: LA-UR-17-31321; PNNL-SA-130724; LLNL-JRNL-740736

Journal Information:: ACS Nano, Vol. 12, Issue 7; ISSN 1936-0851

Publisher:: American Chemical Society (ACS)Copyright Statement

Country of Publication:: United States

Language:: English

Citation Metrics:

Cited by: 13 works

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Semicoherent oxide heterointerfaces: Structure, properties, and implications Uberuaga, Blas Pedro; Dholabhai, Pratik P.; Pilania, Ghanshyam APL Materials, Vol. 7, Issue 10 https://doi.org/10.1063/1.5121027	journal	October 2019
Direct observation of an electrically degenerate interface layer in a GaN/sapphire heterostructure Kim, Young-Min; Lee, Sung Bo; Lee, Jaekwang Nanoscale, Vol. 11, Issue 17 https://doi.org/10.1039/c9nr01803d	journal	January 2019
Improving the Time Stability of Superconducting Planar Resonators Moeed, M. S.; Earnest, C. T.; Béjanin, J. H. MRS Advances, Vol. 4, Issue 40 https://doi.org/10.1557/adv.2019.262	journal	January 2019

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Related Subjects

36 MATERIALS SCIENCE
aluminum
bicrystal
interface
metamorphic
molecular beam epitaxy
molecular dynamic simulation
semicoherent
silicon
Materials science