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Title: Ion irradiation induced nucleation and growth of nanoparticles in amorphous silicon carbide at elevated temperatures

Abstract

Ion irradiation induced crystallization in as-deposited amorphous SiC films is investigated using grazing-angle incidence x-ray diffraction (GIXRD), transmission electron microscopy (TEM) and Raman spectroscopy. Irradiation with 5 MeV Xe to fluence of 115 Xe/nm2 at 700 K results in a homogenous distribution of 3C-SiC grains with an average crystallite size of ~5.7 nm over the entire film thickness (~1 µm). The nucleation and growth processes exhibit a weak dependence on dose in displacements per atom (dpa) in the dose range from 6 to 20 dpa. A transformation of homonuclear C-C bonds from sp3 to sp2 hybridization is observed in the irradiated films, which may be partly responsible for the observed grain size saturation. The results from this study may have a significant impact on synthesis of nanograins in amorphous SiC and other similar materials with effective control of grain size and density by ion irradiation.

Authors:
 [1]; ORCiD logo [2];  [1]; ;  [3]
  1. Lanzhou University
  2. BATTELLE (PACIFIC NW LAB)
  3. VISITORS
Publication Date:
Research Org.:
Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1512696
Report Number(s):
PNNL-SA-130017
DOE Contract Number:  
AC05-76RL01830
Resource Type:
Journal Article
Journal Name:
Journal of Nuclear Materials
Additional Journal Information:
Journal Volume: 505
Country of Publication:
United States
Language:
English
Subject:
phase transformation, SiC, ion irradiation

Citation Formats

Zhang, Limin, Jiang, Weilin, Ai, Wensi, Chen, Liang, and Wang, Tieshan. Ion irradiation induced nucleation and growth of nanoparticles in amorphous silicon carbide at elevated temperatures. United States: N. p., 2018. Web. doi:10.1016/j.jnucmat.2018.04.005.
Zhang, Limin, Jiang, Weilin, Ai, Wensi, Chen, Liang, & Wang, Tieshan. Ion irradiation induced nucleation and growth of nanoparticles in amorphous silicon carbide at elevated temperatures. United States. doi:10.1016/j.jnucmat.2018.04.005.
Zhang, Limin, Jiang, Weilin, Ai, Wensi, Chen, Liang, and Wang, Tieshan. Mon . "Ion irradiation induced nucleation and growth of nanoparticles in amorphous silicon carbide at elevated temperatures". United States. doi:10.1016/j.jnucmat.2018.04.005.
@article{osti_1512696,
title = {Ion irradiation induced nucleation and growth of nanoparticles in amorphous silicon carbide at elevated temperatures},
author = {Zhang, Limin and Jiang, Weilin and Ai, Wensi and Chen, Liang and Wang, Tieshan},
abstractNote = {Ion irradiation induced crystallization in as-deposited amorphous SiC films is investigated using grazing-angle incidence x-ray diffraction (GIXRD), transmission electron microscopy (TEM) and Raman spectroscopy. Irradiation with 5 MeV Xe to fluence of 115 Xe/nm2 at 700 K results in a homogenous distribution of 3C-SiC grains with an average crystallite size of ~5.7 nm over the entire film thickness (~1 µm). The nucleation and growth processes exhibit a weak dependence on dose in displacements per atom (dpa) in the dose range from 6 to 20 dpa. A transformation of homonuclear C-C bonds from sp3 to sp2 hybridization is observed in the irradiated films, which may be partly responsible for the observed grain size saturation. The results from this study may have a significant impact on synthesis of nanograins in amorphous SiC and other similar materials with effective control of grain size and density by ion irradiation.},
doi = {10.1016/j.jnucmat.2018.04.005},
journal = {Journal of Nuclear Materials},
number = ,
volume = 505,
place = {United States},
year = {2018},
month = {7}
}

Works referencing / citing this record:

Effect of proton irradiation on anatase TiO2 nanotube anodes for lithium-ion batteries
journal, July 2019

  • Smith, Kassiopeia A.; Savva, Andreas I.; Mao, Keyou S.
  • Journal of Materials Science, Vol. 54, Issue 20
  • DOI: 10.1007/s10853-019-03825-w