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Title: Electrochemical ion insertion for neuromorphic computing and plasmonics.

Abstract

Abstract not provided.

Authors:
; ; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1511986
Report Number(s):
SAND2018-4802C
662811
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Proposed for presentation at the Electronic Materials Symposium held May 4, 2018 in Santa Clara, CA.
Country of Publication:
United States
Language:
English

Citation Formats

Li, Yiyang, Fuller, Elliot James, Agarwal, Sapan, and Talin, Albert Alec. Electrochemical ion insertion for neuromorphic computing and plasmonics.. United States: N. p., 2018. Web.
Li, Yiyang, Fuller, Elliot James, Agarwal, Sapan, & Talin, Albert Alec. Electrochemical ion insertion for neuromorphic computing and plasmonics.. United States.
Li, Yiyang, Fuller, Elliot James, Agarwal, Sapan, and Talin, Albert Alec. Tue . "Electrochemical ion insertion for neuromorphic computing and plasmonics.". United States. https://www.osti.gov/servlets/purl/1511986.
@article{osti_1511986,
title = {Electrochemical ion insertion for neuromorphic computing and plasmonics.},
author = {Li, Yiyang and Fuller, Elliot James and Agarwal, Sapan and Talin, Albert Alec},
abstractNote = {Abstract not provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {5}
}

Conference:
Other availability
Please see Document Availability for additional information on obtaining the full-text document. Library patrons may search WorldCat to identify libraries that hold this conference proceeding.

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