Addition of the Lewis Acid Zn(C6F5)2 Enables Organic Transistors with a Maximum Hole Mobility in Excess of 20 cm2 V–1 s–1

Paterson, Alexandra F.; Tsetseris, Leonidas; Li, Ruipeng; Basu, Aniruddha; Faber, Hendrik; Emwas, Abdul ‐Hamid; Panidi, Julianna; Fei, Zhuping; Niazi, Muhammad R.; Anjum, Dalaver H.; Heeney, Martin; Anthopoulos, Thomas D.

doi:10.1002/adma.201900871

Title: Addition of the Lewis Acid Zn(C₆F₅)₂ Enables Organic Transistors with a Maximum Hole Mobility in Excess of 20 cm² V^–1 s^–1

Journal Article · Fri May 10 00:00:00 EDT 2019 · Advanced Materials

DOI:https://doi.org/10.1002/adma.201900871· OSTI ID:1542777

Paterson, Alexandra F. ^[1];

^[2]; Li, Ruipeng ^[3]; Basu, Aniruddha ^[1];

^[1]; Emwas, Abdul ‐Hamid ^[1];

^[4];

^[4]; Niazi, Muhammad R. ^[1]; Anjum, Dalaver H. ^[1];

^[4];

^[1]

King Abdullah Univ. of Science and Technology, Thuwal (Saudi Arabia)
National Technical Univ. of Athens, Athens (Greece)
Brookhaven National Lab. (BNL), Upton, NY (United States)
Imperial College London, London (United Kingdom)

Incorporating the molecular organic Lewis acid tris(pentafluorophenyl)borane [B(C₆F₅)₃] into organic semiconductors has shown remarkable promise in recent years for controlling the operating characteristics and performance of various opto/electronic devices, including, light-emitting diodes, solar cells, and organic thin-film transistors (OTFTs). Despite the demonstrated potential, however, to date most of the work has been limited to B(C₆F₅)₃ with the latter serving as the prototypical air-stable molecular Lewis acid system. Herein, the use of bis(pentafluorophenyl)zinc [Zn(C₆F₅)₂] is reported as an alternative Lewis acid additive in high-hole-mobility OTFTs based on small-molecule:polymer blends comprising 2,7-dioctyl[1]benzothieno [3,2-b][1]benzothiophene and indacenodithiophene–benzothiadiazole. Systematic analysis of the materials and device characteristics supports the hypothesis that Zn(C₆F₅)₂ acts simultaneously as a p-dopant and a microstructure modifier. It is proposed that it is the combination of these synergistic effects that leads to OTFTs with a maximum hole mobility value of 21.5 cm² V^–1 s^–1. In conclusion, the work not only highlights Zn(C₆F₅)₂ as a promising new additive for next-generation optoelectronic devices, but also opens up new avenues in the search for high-mobility organic semiconductors.

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Research Organization:: Brookhaven National Laboratory (BNL), Upton, NY (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0012704

OSTI ID:: 1542777

Alternate ID(s):: OSTI ID: 1511885

Report Number(s):: BNL-211853-2019-JAAM

Journal Information:: Advanced Materials, Vol. 31, Issue 27; ISSN 0935-9648

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 56 works

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Title: Addition of the Lewis Acid Zn(C6F5)2 Enables Organic Transistors with a Maximum Hole Mobility in Excess of 20 cm2 V–1 s–1

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Title: Addition of the Lewis Acid Zn(C₆F₅)₂ Enables Organic Transistors with a Maximum Hole Mobility in Excess of 20 cm² V^–1 s^–1