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Title: Optical control of polarization in ferroelectric heterostructures

Abstract

In the ferroelectric devices, polarization control is usually accomplished by application of an electric field. In this paper, we demonstrate optically induced polarization switching in BaTiO3-based ferroelectric heterostructures utilizing a two-dimensional narrow-gap semiconductor MoS2 as a top electrode. This effect is attributed to the redistribution of the photo-generated carriers and screening charges at the MoS2/BaTiO3 interface. Specifically, a two-step process, which involves formation of intra-layer excitons during light absorption followed by their decay into inter-layer excitons, results in the positive charge accumulation at the interface forcing the polarization reversal from the upward to the downward direction. Theoretical modeling of the MoS2 optical absorption spectra with and without the applied electric field provides quantitative support for the proposed mechanism. It is suggested that the discovered effect is of general nature and should be observable in any heterostructure comprising a ferroelectric and a narrow gap semiconductor.

Authors:
 [1]; ORCiD logo [1];  [1];  [2];  [2];  [3];  [3];  [2];  [4]; ORCiD logo [1]; ORCiD logo [1]
  1. Univ. of Nebraska, Lincoln, NE (United States)
  2. Univ. of Wisconsin, Madison, WI (United States)
  3. Univ. of Luxembourg (Luxembourg)
  4. Luxembourg Inst. of Science and Tech., Esch/Alzette (Luxembourg)
Publication Date:
Research Org.:
Univ. of Wisconsin, Madison, WI (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1511703
Grant/Contract Number:  
FG02-06ER46327
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Nature Communications
Additional Journal Information:
Journal Volume: 9; Journal Issue: 1; Journal ID: ISSN 2041-1723
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Li, Tao, Lipatov, Alexey, Lu, Haidong, Lee, Hyungwoo, Lee, Jung-Woo, Torun, Engin, Wirtz, Ludger, Eom, Chang-Beom, Íñiguez, Jorge, Sinitskii, Alexander, and Gruverman, Alexei. Optical control of polarization in ferroelectric heterostructures. United States: N. p., 2018. Web. doi:10.1038/s41467-018-05640-4.
Li, Tao, Lipatov, Alexey, Lu, Haidong, Lee, Hyungwoo, Lee, Jung-Woo, Torun, Engin, Wirtz, Ludger, Eom, Chang-Beom, Íñiguez, Jorge, Sinitskii, Alexander, & Gruverman, Alexei. Optical control of polarization in ferroelectric heterostructures. United States. https://doi.org/10.1038/s41467-018-05640-4
Li, Tao, Lipatov, Alexey, Lu, Haidong, Lee, Hyungwoo, Lee, Jung-Woo, Torun, Engin, Wirtz, Ludger, Eom, Chang-Beom, Íñiguez, Jorge, Sinitskii, Alexander, and Gruverman, Alexei. 2018. "Optical control of polarization in ferroelectric heterostructures". United States. https://doi.org/10.1038/s41467-018-05640-4. https://www.osti.gov/servlets/purl/1511703.
@article{osti_1511703,
title = {Optical control of polarization in ferroelectric heterostructures},
author = {Li, Tao and Lipatov, Alexey and Lu, Haidong and Lee, Hyungwoo and Lee, Jung-Woo and Torun, Engin and Wirtz, Ludger and Eom, Chang-Beom and Íñiguez, Jorge and Sinitskii, Alexander and Gruverman, Alexei},
abstractNote = {In the ferroelectric devices, polarization control is usually accomplished by application of an electric field. In this paper, we demonstrate optically induced polarization switching in BaTiO3-based ferroelectric heterostructures utilizing a two-dimensional narrow-gap semiconductor MoS2 as a top electrode. This effect is attributed to the redistribution of the photo-generated carriers and screening charges at the MoS2/BaTiO3 interface. Specifically, a two-step process, which involves formation of intra-layer excitons during light absorption followed by their decay into inter-layer excitons, results in the positive charge accumulation at the interface forcing the polarization reversal from the upward to the downward direction. Theoretical modeling of the MoS2 optical absorption spectra with and without the applied electric field provides quantitative support for the proposed mechanism. It is suggested that the discovered effect is of general nature and should be observable in any heterostructure comprising a ferroelectric and a narrow gap semiconductor.},
doi = {10.1038/s41467-018-05640-4},
url = {https://www.osti.gov/biblio/1511703}, journal = {Nature Communications},
issn = {2041-1723},
number = 1,
volume = 9,
place = {United States},
year = {Tue Aug 21 00:00:00 EDT 2018},
month = {Tue Aug 21 00:00:00 EDT 2018}
}

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Works referenced in this record:

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Optically controlled electroresistance and electrically controlled photovoltage in ferroelectric tunnel junctions
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Ultrafast formation of interlayer hot excitons in atomically thin MoS2/WS2 heterostructures
journal, August 2016


Learning through ferroelectric domain dynamics in solid-state synapses
text, January 2017


Light-induced size changes in BiFeO3 crystals
text, January 2010


Vibrational and optical properties of MoS$_2$: from monolayer to bulk
text, January 2016


Two Dimensional Atomic Crystals
text, January 2005


Ferroelectric-Gated Two-Dimensional-Material-Based Electron Devices
journal, January 2017


Vibrational and optical properties of MoS 2 : From monolayer to bulk
journal, December 2015


Optoelectrical Molybdenum Disulfide (MoS 2 )—Ferroelectric Memories
journal, July 2015


Ferroelectric Tunnel Memristor
journal, October 2012


Few-Layer MoS 2 with High Broadband Photogain and Fast Optical Switching for Use in Harsh Environments
journal, April 2013


Ultrafast formation of interlayer hot excitons in atomically thin MoS2/WS2 heterostructures
journal, August 2016


Ferroelectric domain wall motion induced by polarized light
journal, March 2015


Electrical control of antiferromagnetic domains in multiferroic BiFeO3 films at room temperature
journal, September 2006


A photoferroelectric material is more than the sum of its parts
journal, March 2012


Coupling between magnetic order and charge transport in a two-dimensional magnetic semiconductor
journal, May 2022


An anomalous interlayer exciton in MoS2
journal, November 2016


Photoinduced hysteresis changes and charge trapping in BaTiO 3 dielectrics
journal, February 1994


Nanoscale observation of photoinduced domain pinning and investigation of imprint behavior in ferroelectric thin films
journal, September 2002


Photoinduced hysteresis changes and optical storage in (Pb,La)(Zr,Ti)O 3 thin films and ceramics
journal, October 1994


PLZT electrooptic materials and applications—a review
journal, September 1987


QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials
journal, September 2009


Mapping nanoscale elasticity and dissipation using dual frequency contact resonance AFM
journal, August 2011


Enhancement of Ferroelectricity in Strained BaTiO3 Thin Films
journal, November 2004


APPLIED PHYSICS: Tunneling Across a Ferroelectric
journal, July 2006


Applications of Modern Ferroelectrics
journal, February 2007


Mechanical Writing of Ferroelectric Polarization
journal, April 2012


Learning through ferroelectric domain dynamics in solid-state synapses
text, January 2017


Light-induced size changes in BiFeO3 crystals
text, January 2010


Mechanisms of photoconductivity in atomically thin MoS2
text, January 2014


Works referencing / citing this record:

Functional Oxides for Photoneuromorphic Engineering: Toward a Solar Brain
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Nano‐Ferroelectric for High Efficiency Overall Water Splitting under Ultrasonic Vibration
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