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Title: Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures

Abstract

Atomically precise fabrication methods are critical for the development of next-generation technologies. For example, in nanoelectronics based on van der Waals heterostructures, where two-dimensional materials are stacked to form devices with nanometer thicknesses, a major challenge is patterning with atomic precision and individually addressing each molecular layer. Here we demonstrate an atomically thin graphene etch stop for patterning van der Waals heterostructures through the selective etch of two-dimensional materials with xenon difluoride gas. Graphene etch stops enable one-step patterning of sophisticated devices from heterostructures by accessing buried layers and forming one-dimensional contacts. Graphene transistors with fluorinated graphene contacts show a room temperature mobility of 40,000 cm 2 V -1 s -1 at carrier density of 4 × 10 12 cm -2 and contact resistivity of 80 Ω·μm. We demonstrate the versatility of graphene etch stops with three-dimensionally integrated nanoelectronics with multiple active layers and nanoelectromechanical devices with performance comparable to the state-of-the-art.

Authors:
 [1];  [2];  [1];  [1];  [1];  [2];  [2]; ORCiD logo [3];  [3];  [1];  [1];  [1];  [1]; ORCiD logo [2];  [1]
  1. Univ. of Illinois at Urbana-Champaign, Urbana, IL (United States)
  2. Yonsei Univ., Seoul (Korea)
  3. National Inst. for Materials Science (NIMS), Tsukuba (Japan)
Publication Date:
Research Org.:
Univ. of Illinois at Urbana-Champaign, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1511448
Grant/Contract Number:  
SC0012649
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Nature Communications
Additional Journal Information:
Journal Volume: 9; Journal Issue: 1; Journal ID: ISSN 2041-1723
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Son, Jangyup, Kwon, Junyoung, Kim, SunPhil, Lv, Yinchuan, Yu, Jaehyung, Lee, Jong-Young, Ryu, Huije, Watanabe, Kenji, Taniguchi, Takashi, Garrido-Menacho, Rita, Mason, Nadya, Ertekin, Elif, Huang, Pinshane Y., Lee, Gwan-Hyoung, and M. van der Zande, Arend. Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures. United States: N. p., 2018. Web. doi:10.1038/s41467-018-06524-3.
Son, Jangyup, Kwon, Junyoung, Kim, SunPhil, Lv, Yinchuan, Yu, Jaehyung, Lee, Jong-Young, Ryu, Huije, Watanabe, Kenji, Taniguchi, Takashi, Garrido-Menacho, Rita, Mason, Nadya, Ertekin, Elif, Huang, Pinshane Y., Lee, Gwan-Hyoung, & M. van der Zande, Arend. Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures. United States. doi:10.1038/s41467-018-06524-3.
Son, Jangyup, Kwon, Junyoung, Kim, SunPhil, Lv, Yinchuan, Yu, Jaehyung, Lee, Jong-Young, Ryu, Huije, Watanabe, Kenji, Taniguchi, Takashi, Garrido-Menacho, Rita, Mason, Nadya, Ertekin, Elif, Huang, Pinshane Y., Lee, Gwan-Hyoung, and M. van der Zande, Arend. Fri . "Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures". United States. doi:10.1038/s41467-018-06524-3. https://www.osti.gov/servlets/purl/1511448.
@article{osti_1511448,
title = {Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures},
author = {Son, Jangyup and Kwon, Junyoung and Kim, SunPhil and Lv, Yinchuan and Yu, Jaehyung and Lee, Jong-Young and Ryu, Huije and Watanabe, Kenji and Taniguchi, Takashi and Garrido-Menacho, Rita and Mason, Nadya and Ertekin, Elif and Huang, Pinshane Y. and Lee, Gwan-Hyoung and M. van der Zande, Arend},
abstractNote = {Atomically precise fabrication methods are critical for the development of next-generation technologies. For example, in nanoelectronics based on van der Waals heterostructures, where two-dimensional materials are stacked to form devices with nanometer thicknesses, a major challenge is patterning with atomic precision and individually addressing each molecular layer. Here we demonstrate an atomically thin graphene etch stop for patterning van der Waals heterostructures through the selective etch of two-dimensional materials with xenon difluoride gas. Graphene etch stops enable one-step patterning of sophisticated devices from heterostructures by accessing buried layers and forming one-dimensional contacts. Graphene transistors with fluorinated graphene contacts show a room temperature mobility of 40,000 cm2 V-1 s-1 at carrier density of 4 × 1012 cm-2 and contact resistivity of 80 Ω·μm. We demonstrate the versatility of graphene etch stops with three-dimensionally integrated nanoelectronics with multiple active layers and nanoelectromechanical devices with performance comparable to the state-of-the-art.},
doi = {10.1038/s41467-018-06524-3},
journal = {Nature Communications},
issn = {2041-1723},
number = 1,
volume = 9,
place = {United States},
year = {2018},
month = {9}
}

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