Gate-controlled magnetic properties of the magnetic semiconductor (Zn,Co)O

Lee, H. -J.; Helgren, E.; Hellman, F.

doi:10.1063/1.3147856

Title: Gate-controlled magnetic properties of the magnetic semiconductor (Zn,Co)O

Journal Article · Mon May 25 00:00:00 EDT 2009 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3147856· OSTI ID:1511312

Lee, H. -J. ^[1]; Helgren, E. ^[1]; Hellman, F. ^[1]

Univ. of California, Berkeley, CA (United States). Dept. of Physics

Electric field-controlled ferromagnetism of (Zn,Co)O is demonstrated via anomalous Hall effect measurements. The electron carrier concentration in this material is 1.65× 10²⁰ cm^-3 as measured via ordinary Hall effect at 4 K, and an anomalous Hall effect is observed up to 6 K, but with no hysteresis at any temperature. With positive electric gate field, the carrier concentration is increased by approximately 2%, resulting in a clear magnetic hysteresis at 4 K. In conclusion, the ability to reversibly induce/eliminate ferromagnetism by applied gate field alone, measured via the effect on the carriers, is a clear sign of carrier-induced ferromagnetism in this system.

View Accepted Manuscript (DOE)

Cite

Export

Save

Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 1511312

Journal Information:: Applied Physics Letters, Vol. 94, Issue 21; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

Citation Metrics:

Cited by: 22 works

Citation information provided by
Web of Science

References (16)

Intrinsic n -type versus p -type doping asymmetry and the defect physics of ZnO Zhang, S. B.; Wei, S. -H.; Zunger, Alex Physical Review B, Vol. 63, Issue 7 https://doi.org/10.1103/PhysRevB.63.075205	journal	January 2001
Paramagnetism of the Co sublattice in ferromagnetic ${Zn}_{1 - x} {Co}_{x} O$ films Barla, A.; Schmerber, G.; Beaurepaire, E. Physical Review B, Vol. 76, Issue 12 https://doi.org/10.1103/PhysRevB.76.125201	journal	September 2007
Anomalous Hall effect governed by electron doping in a room-temperature transparent ferromagnetic semiconductor Toyosaki, Hidemi; Fukumura, Tomoteru; Yamada, Yasuhiro Nature Materials, Vol. 3, Issue 4 https://doi.org/10.1038/nmat1099	journal	March 2004
Giant magnetic moment in an anomalous ferromagnetic insulator: Co-doped $ZnO$ Song, C.; Geng, K. W.; Zeng, F. Physical Review B, Vol. 73, Issue 2 https://doi.org/10.1103/PhysRevB.73.024405	journal	January 2006
Microstructural and magnetic properties of ZnO:TM (TM=Co,Mn) diluted magnetic semiconducting nanoparticles Mandal, S. K.; Das, A. K.; Nath, T. K. Journal of Applied Physics, Vol. 100, Issue 10 https://doi.org/10.1063/1.2360387	journal	November 2006
Metal-insulator transition in Co-doped $ZnO$ : Magnetotransport properties Xu, Qingyu; Hartmann, Lars; Schmidt, Heidemarie Physical Review B, Vol. 73, Issue 20 https://doi.org/10.1103/PhysRevB.73.205342	journal	May 2006
Origin of ferromagnetism in ZnO codoped with Ga and Co: Experiment and theory He, Y.; Sharma, Parmanand; Biswas, Krishanu Physical Review B, Vol. 78, Issue 15 https://doi.org/10.1103/PhysRevB.78.155202	journal	October 2008
Role of metallic cobalt in room temperature dilute ferromagnetic semiconductor Zn0.95Co0.05O1−δ Liu, Q.; Gan, C. L.; Yuan, C. L. Applied Physics Letters, Vol. 92, Issue 3 https://doi.org/10.1063/1.2835702	journal	January 2008
Making Nonmagnetic Semiconductors Ferromagnetic Ohno, H. Science, Vol. 281, Issue 5379 https://doi.org/10.1126/science.281.5379.951	journal	August 1998
Impurity control in Co-doped ZnO films through modifying cooling atmosphere Liu, Yinglin; MacManus-Driscoll, Judith L. Applied Physics Letters, Vol. 94, Issue 2 https://doi.org/10.1063/1.3068753	journal	January 2009
Ferromagnetism in Ni-doped ZnO films: Extrinsic or intrinsic? Snure, Michael; Kumar, Dhananjay; Tiwari, Ashutosh Applied Physics Letters, Vol. 94, Issue 1 https://doi.org/10.1063/1.3067998	journal	January 2009
First principles materials design for semiconductor spintronics Sato, K.; Katayama-Yoshida, H. Semiconductor Science and Technology, Vol. 17, Issue 4 https://doi.org/10.1088/0268-1242/17/4/309	journal	March 2002
MATERIALS SCIENCE: Seeking Room-Temperature Ferromagnetic Semiconductors Ando, K. Science, Vol. 312, Issue 5782 https://doi.org/10.1126/science.1125461	journal	June 2006
Magnetism of (Zn,Co)O thin films probed by x-ray absorption spectroscopies Rode, K.; Mattana, R.; Anane, A. Applied Physics Letters, Vol. 92, Issue 1 https://doi.org/10.1063/1.2829610	journal	January 2008
Direct Kinetic Correlation of Carriers and Ferromagnetism in ${Co}^{2 +} : ZnO$ Kittilstved, Kevin R.; Schwartz, Dana A.; Tuan, Allan C. Physical Review Letters, Vol. 97, Issue 3 https://doi.org/10.1103/PhysRevLett.97.037203	journal	July 2006
Electric-field control of ferromagnetism Ohno, H.; Chiba, D.; Matsukura, F. Nature, Vol. 408, Issue 6815 https://doi.org/10.1038/35050040	journal	December 2000

Cited By (4)

Control of magnetism by electric fields Matsukura, Fumihiro; Tokura, Yoshinori; Ohno, Hideo Nature Nanotechnology, Vol. 10, Issue 3 https://doi.org/10.1038/nnano.2015.22	journal	March 2015
Influence of free charge carrier density on the magnetic behavior of (Zn,Co)O thin film studied by Field Effect modulation of magnetotransport Bellingeri, E.; Rusponi, S.; Lehnert, A. Scientific Reports, Vol. 9, Issue 1 https://doi.org/10.1038/s41598-018-36336-w	journal	January 2019
Magnetism of Co-doped ZnO epitaxially grown on a ZnO substrate Li, Li; Guo, Y.; Cui, X. Y. Physical Review B, Vol. 85, Issue 17 https://doi.org/10.1103/physrevb.85.174430	journal	May 2012
Enhanced Photoluminescence and Raman Properties of Al-Doped ZnO Nanostructures Prepared Using Thermal Chemical Vapor Deposition of Methanol Assisted with Heated Brass Thandavan, Tamil Many K.; Gani, Siti Meriam Abdul; San Wong, Chiow PLOS ONE, Vol. 10, Issue 3 https://doi.org/10.1371/journal.pone.0121756	journal	March 2015