Uniform p-type doping of silicon nanowires synthesized via vapor-liquid-solid growth with silicon tetrachloride

Kendrick, Chito; Kuo, Meng -Wei; Li, Jie; Shen, Haoting; Mayer, Theresa S.; Redwing, Joan M.

doi:10.1063/1.4993632

Title: Uniform p-type doping of silicon nanowires synthesized via vapor-liquid-solid growth with silicon tetrachloride

Journal Article · Fri Dec 15 00:00:00 EST 2017 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4993632· OSTI ID:1511167

Kendrick, Chito ^[1]; Kuo, Meng -Wei ^[2]; Li, Jie ^[2]; Shen, Haoting ^[3]; Mayer, Theresa S. ^[2];

^[2]

Pennsylvania State Univ., University Park, PA (United States); Michigan Technological Univ., Houghton, MI (United States)
Pennsylvania State Univ., University Park, PA (United States)
Pennsylvania State Univ., University Park, PA (United States); Univ. of Florida, Gainesville, FL (United States)

Boron-doped silicon nanowires (SiNWs) grown by the vapor-liquid-solid growth mechanism using silicon tetrachloride (SiCl4) as the silicon precursor and trimethylboron (TMB) as the boron source were studied to understand the axial and radial doping uniformity. TMB-doped SiNWs with diameters up to 400 nm and lengths > 7.5 μm were integrated into a global back-gated test structure with multiple electrodes for electrical characterization. From gate modulated measurements, the SiNWs were confirmed to be heavily doped p-type. Multiple four point resistivity measurements across a total length of 7.5 μm were taken on as-grown SiNWs. Resistivity, corrected for surface charge, was determined to be 0.01 +/– 0.002 Ω cm along the entire length of the as-grown boron doped SiNWs. This was also observed in the axial direction for etched SiNWs, with corrected resistivity of 0.01 +/– 0.003 Ω cm, therefore confirming the uniform p-type doping of SiNWs using TMB and SiCl₄ as precursors.

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Research Organization:: Pennsylvania State Univ., University Park, PA (United States)

Sponsoring Organization:: USDOE

Grant/Contract Number:: EE0005323; FG36-08GO18010

OSTI ID:: 1511167

Alternate ID(s):: OSTI ID: 1413564

Journal Information:: Journal of Applied Physics, Vol. 122, Issue 23; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 6 works

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