Luminescence of III-IV-V thin film alloys grown by metalorganic chemical vapor deposition

Jia, Roger; Zhu, Tony; Bulović, Vladimir; Fitzgerald, Eugene A.

doi:10.1063/1.5016443

Title: Luminescence of III-IV-V thin film alloys grown by metalorganic chemical vapor deposition

Journal Article · Thu May 03 00:00:00 EDT 2018 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.5016443· OSTI ID:1511156

Jia, Roger ^[1]; Zhu, Tony ^[1]; Bulović, Vladimir ^[1];

^[1]

Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)

III-IV-V heterovalent alloys have the potential to satisfy the need for infrared bandgap materials that also have lattice constants near GaAs. In this work, significant room temperature photoluminescence is reported for the first time in high quality III-IV-V alloys grown by metalorganic chemical vapor deposition. Pronounced phase separation, a characteristic suspected to quench luminescence in the alloys in the past, was successfully inhibited by a modified growth process. Small scale composition fluctuations were observed in the alloys; higher growth temperatures resulted in fluctuations with a striated morphology, while lower growth temperatures resulted in fluctuations with a speckled morphology. The composition fluctuations cause bandgap narrowing in the alloys—measurements of various compositions of (GaAs)_1-x(Ge2)_x alloys reveal a maximum energy transition of 0.8 eV under 20% Ge composition rather than a continuously increasing transition with the decreasing Ge composition. Additionally, luminescence intensity decreased with the decreasing Ge composition. The alloys appear to act as a Ge-like solid penetrating a GaAs lattice, resulting in optical properties similar to those of Ge but with a direct-bandgap nature; a decrease in the Ge composition corresponds to a reduction in the light-emitting Ge-like material within the lattice. An energy transition larger than 0.8 eV was obtained through the addition of silicon to the (GaAs)_1-x(Ge2)_x alloy. The results indicate significant promise for III-IV-V alloys as potential materials for small bandgap optical devices with previously unachievable lattice constants.

View Accepted Manuscript (DOE)

View Accepted Manuscript (Publisher)

Cite

Export

Save

Research Organization:: Energy Frontier Research Centers (EFRC) (United States). Center for Excitonics (CE); Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0001088

OSTI ID:: 1511156

Alternate ID(s):: OSTI ID: 1435876

Journal Information:: Journal of Applied Physics, Vol. 123, Issue 17; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

Citation Metrics:

Cited by: 4 works

Citation information provided by
Web of Science

References (25)

Structural studies of natural superlattices in group III-V alloy epitaxial layers Norman, A. G.; Seong, T. -Y; Ferguson, I. T. Semiconductor Science and Technology, Vol. 8, Issue 1S https://doi.org/10.1088/0268-1242/8/1S/003	journal	January 1993
Growth of (GaAs)1_x(Ge2)x by metalorganic chemical vapor deposition Vernon, S. M.; Sanfacon, M. M.; Ahrenkiel, R. K. Journal of Electronic Materials, Vol. 23, Issue 2 https://doi.org/10.1007/BF02655261	journal	February 1994
Growth and optical properties of single-crystal metastable (GaAs)1−xGex alloys Barnett, S. A.; Ray, M. A.; Lastras, A. Electronics Letters, Vol. 18, Issue 20 https://doi.org/10.1049/el:19820604	journal	January 1982
Naturally formed In _x Al _{1− x} As/In _y Al _{1− y} As vertical superlattices Jun, Sung Won; Seong, Tae‐Yeon; Lee, J. H. Applied Physics Letters, Vol. 68, Issue 24 https://doi.org/10.1063/1.115787	journal	June 1996
Ge-related faceting and segregation during the growth of metastable (GaAs)1−x(Ge2)x alloy layers by metal–organic vapor-phase epitaxy Norman, A. G.; Olson, J. M.; Geisz, J. F. Applied Physics Letters, Vol. 74, Issue 10 https://doi.org/10.1063/1.123557	journal	March 1999
Polar-on-nonpolar epitaxy Kroemer, Herbert Journal of Crystal Growth, Vol. 81, Issue 1-4 https://doi.org/10.1016/0022-0248(87)90391-5	journal	February 1987
High-efficiency GaInP∕GaAs∕InGaAs triple-junction solar cells grown inverted with a metamorphic bottom junction Geisz, J. F.; Kurtz, Sarah; Wanlass, M. W. Applied Physics Letters, Vol. 91, Issue 2, Article No. 023502 https://doi.org/10.1063/1.2753729	journal	July 2007
Two-dimensional phase separation and surface-reconstruction driven atomic ordering in mixed III–V layers Mahajan, S. Materials Science and Engineering: B, Vol. 30, Issue 2-3 https://doi.org/10.1016/0921-5107(94)09013-0	journal	March 1995
Narrow band gap (1 eV) InGaAsSbN solar cells grown by metalorganic vapor phase epitaxy Kim, T. W.; Garrod, T. J.; Kim, K. Applied Physics Letters, Vol. 100, Issue 12 https://doi.org/10.1063/1.3693160	journal	March 2012
Growth of highly tensile-strained Ge on relaxed InxGa1−xAs by metal-organic chemical vapor deposition Bai, Yu; Lee, Kenneth E.; Cheng, Chengwei Journal of Applied Physics, Vol. 104, Issue 8 https://doi.org/10.1063/1.3005886	journal	October 2008
Metal-organic chemical vapor deposition of single domain GaAs on Ge/GexSi1−x/Si and Ge substrates Ting, S. M.; Fitzgerald, E. A. Journal of Applied Physics, Vol. 87, Issue 5 https://doi.org/10.1063/1.372227	journal	March 2000
Correlation effects in metastable (Ga As)1−x Ge2x alloys Koiller, Belita; Davidovich, Maria A.; Osório, Roberto Solid State Communications, Vol. 55, Issue 10 https://doi.org/10.1016/0038-1098(85)90194-2	journal	September 1985
On the Chemical Origin of the Gap Bowing in (GaAs)1−x Ge2x Alloys: A Combined DFT–QSGW Study Giorgi, Giacomo; Schilfgaarde, Mark; Korkin, Anatoli Nanoscale Research Letters, Vol. 5, Issue 3 https://doi.org/10.1007/s11671-009-9516-2	journal	January 2010
Growth, microstructure, and luminescent properties of direct-bandgap InAlP on relaxed InGaAs on GaAs substrates Mukherjee, K.; Beaton, D. A.; Christian, T. Journal of Applied Physics, Vol. 113, Issue 18 https://doi.org/10.1063/1.4804264	journal	May 2013
Optical Absorption in Single-Crystal Metastable ${(GaAs)}_{1 - x} {({Ge}_{2})}_{x}$ Alloys: Evidence for a Zinc-Blende-Diamond Order-Disorder Transition Newman, Kathie E.; Lastras-Martinez, A.; Kramer, Barnett Physical Review Letters, Vol. 50, Issue 19 https://doi.org/10.1103/PhysRevLett.50.1466	journal	May 1983
Short- and long-range-order effects on the electronic properties of III-V semiconductor alloys Mäder, Kurt A.; Zunger, Alex Physical Review B, Vol. 51, Issue 16 https://doi.org/10.1103/PhysRevB.51.10462	journal	April 1995
A review of recent research on the growth and physical properties of single crystal metastable elemental and alloy semiconductors Greene, J. E. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 1, Issue 2 https://doi.org/10.1116/1.582492	journal	January 1983
Zinc-blende—diamond order-disorder transition in metastable crystalline ${(GaAs)}_{1 - x} {Ge}_{2 x}$ alloys Newman, Kathie E.; Dow, John D. Physical Review B, Vol. 27, Issue 12 https://doi.org/10.1103/PhysRevB.27.7495	journal	June 1983
Immiscibility and spinodal decomposition in III/V alloys Stringfellow, G. B. Journal of Crystal Growth, Vol. 65, Issue 1-3 https://doi.org/10.1016/0022-0248(83)90086-6	journal	December 1983
1-eV solar cells with GaInNAs active layer Friedman, D. J.; Geisz, J. F.; Kurtz, S. R. Journal of Crystal Growth, Vol. 195, Issue 1-4 https://doi.org/10.1016/S0022-0248(98)00561-2	journal	December 1998
Structure of the alloy (GaAs $)_{1 - x}$ ${Ge}_{2 x}$ and its electronic properties Gu, Bing-Lin; Ni, Jun; Zhu, Jia-Lin Physical Review B, Vol. 45, Issue 8 https://doi.org/10.1103/PhysRevB.45.4071	journal	February 1992
Surface layer spinodal decomposition in In _{1− x} Ga _x As _y P _{1− y} and In _{1− x} Ga _x As grown by hydride transport vapor‐phase epitaxy Chu, S. N. G.; Nakahara, S.; Strege, K. E. Journal of Applied Physics, Vol. 57, Issue 10 https://doi.org/10.1063/1.335368	journal	May 1985
Effects of a zinc-blende – diamond order-disorder transition on the crystal, electronic, and vibrational structures of metastable (GaAs $)_{1 - x}$ ( ${Ge}_{2}$ $)_{x}$ alloys Newman, Kathie E.; Dow, John D.; Bunker, Bruce A. Physical Review B, Vol. 39, Issue 1 https://doi.org/10.1103/PhysRevB.39.657	journal	January 1989
Thermal conductivity of GaAs/Ge nanostructures Jia, Roger; Zeng, Lingping; Chen, Gang Applied Physics Letters, Vol. 110, Issue 22 https://doi.org/10.1063/1.4984957	journal	May 2017
Competitive evolution of the fine contrast modulation and CuPt ordering in InGaP/GaAs layers Diéguez, A.; Peiró, F.; Cornet, A. Journal of Applied Physics, Vol. 80, Issue 7 https://doi.org/10.1063/1.363332	journal	October 1996

Cited By (1)

Growth and in-plane undulations of GaAs/Ge superlattices on [001]-oriented Ge and GaAs substrates: formation of regular 3D island-in-network nanostructures Liu, Hongfei; Jin, Yunjiang; Lin, Ming Journal of Materials Chemistry C, Vol. 6, Issue 47 https://doi.org/10.1039/c8tc04799e	journal	January 2018

Similar Records

Metalorganic chemical vapor deposition of ZnGeN₂ films on GaN: effects of cation stoichiometry on surface morphology and crystallinity

Conference · Wed Jun 24 00:00:00 EDT 2020 · OSTI ID:1511156

Karim, Md Rezaul; Jayatunga, Benthara Hewage Dinushi; Zhu, Menglin; +6 more

Metalorganic chemical vapor deposition-regrown Ga-rich InGaP films on SiGe virtual substrates for Si-based III-V optoelectronic device applications

Journal Article · Fri Mar 24 00:00:00 EDT 2017 · Journal of Vacuum Science and Technology A · OSTI ID:1511156

Kim, TaeWan; Wang, Bing; Wang, Cong; +5 more

Characteristics of GaAsN/GaAsSb type-II quantum wells grown by metalorganic vapor phase epitaxy on GaAs substrates

Journal Article · Thu Dec 15 00:00:00 EST 2005 · Journal of Applied Physics · OSTI ID:1511156

Khandekar, A A; Hawkins, B E; Kuech, T F; +5 more

Related Subjects

36 MATERIALS SCIENCE

Title: Luminescence of III-IV-V thin film alloys grown by metalorganic chemical vapor deposition

Citation Formats

References (25)

Cited By (1)

Similar Records

Related Subjects