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Title: The influence of point defects on the thermal conductivity of AlN crystals

Abstract

Here, the average bulk thermal conductivity of free-standing physical vapor transport and hydride vapor phase epitaxy single crystal AlN samples with different impurity concentrations is analyzed using the 3ω method in the temperature range of 30–325 K. AlN wafers grown by physical vapor transport show significant variation in thermal conductivity at room temperature with values ranging between 268 W/m K and 339 W/m K. AlN crystals grown by hydride vapor phase epitaxy yield values between 298 W/m K and 341 W/m K at room temperature, suggesting that the same fundamental mechanisms limit the thermal conductivity of AlN grown by both techniques. All samples in this work show phonon resonance behavior resulting from incorporated point defects. Samples shown by optical analysis to contain carbon-silicon complexes exhibit higher thermal conductivity above 100 K. Lastly, phonon scattering by point defects is determined to be the main limiting factor for thermal conductivity of AlN within the investigated temperature range.

Authors:
 [1]; ORCiD logo [1]; ORCiD logo [1];  [1];  [1]; ORCiD logo [2];  [3];  [4];  [1]; ORCiD logo [2];  [5];  [4];  [1]
  1. North Carolina State Univ., Raleigh, NC (United States)
  2. Leibniz Institute for Crystal Growth (IKZ), Berlin (Germany)
  3. Tokuyama Corporation, Tsukuba (Japan)
  4. North Carolina State Univ., Raleigh, NC (United States); Adroit Materials, Inc., Cary, NC (United States)
  5. Tokyo University of Agriculture and Technology, Koganei (Japan)
Publication Date:
Research Org.:
Adroit Materials, Inc., Cary, NC (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1511154
Alternate Identifier(s):
OSTI ID: 1436905
Grant/Contract Number:  
SC0011883
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 123; Journal Issue: 18; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Rounds, Robert, Sarkar, Biplab, Alden, Dorian, Guo, Qiang, Klump, Andrew, Hartmann, Carsten, Nagashima, Toru, Kirste, Ronny, Franke, Alexander, Bickermann, Matthias, Kumagai, Yoshinao, Sitar, Zlatko, and Collazo, Ramón. The influence of point defects on the thermal conductivity of AlN crystals. United States: N. p., 2018. Web. doi:10.1063/1.5028141.
Rounds, Robert, Sarkar, Biplab, Alden, Dorian, Guo, Qiang, Klump, Andrew, Hartmann, Carsten, Nagashima, Toru, Kirste, Ronny, Franke, Alexander, Bickermann, Matthias, Kumagai, Yoshinao, Sitar, Zlatko, & Collazo, Ramón. The influence of point defects on the thermal conductivity of AlN crystals. United States. doi:10.1063/1.5028141.
Rounds, Robert, Sarkar, Biplab, Alden, Dorian, Guo, Qiang, Klump, Andrew, Hartmann, Carsten, Nagashima, Toru, Kirste, Ronny, Franke, Alexander, Bickermann, Matthias, Kumagai, Yoshinao, Sitar, Zlatko, and Collazo, Ramón. Mon . "The influence of point defects on the thermal conductivity of AlN crystals". United States. doi:10.1063/1.5028141. https://www.osti.gov/servlets/purl/1511154.
@article{osti_1511154,
title = {The influence of point defects on the thermal conductivity of AlN crystals},
author = {Rounds, Robert and Sarkar, Biplab and Alden, Dorian and Guo, Qiang and Klump, Andrew and Hartmann, Carsten and Nagashima, Toru and Kirste, Ronny and Franke, Alexander and Bickermann, Matthias and Kumagai, Yoshinao and Sitar, Zlatko and Collazo, Ramón},
abstractNote = {Here, the average bulk thermal conductivity of free-standing physical vapor transport and hydride vapor phase epitaxy single crystal AlN samples with different impurity concentrations is analyzed using the 3ω method in the temperature range of 30–325 K. AlN wafers grown by physical vapor transport show significant variation in thermal conductivity at room temperature with values ranging between 268 W/m K and 339 W/m K. AlN crystals grown by hydride vapor phase epitaxy yield values between 298 W/m K and 341 W/m K at room temperature, suggesting that the same fundamental mechanisms limit the thermal conductivity of AlN grown by both techniques. All samples in this work show phonon resonance behavior resulting from incorporated point defects. Samples shown by optical analysis to contain carbon-silicon complexes exhibit higher thermal conductivity above 100 K. Lastly, phonon scattering by point defects is determined to be the main limiting factor for thermal conductivity of AlN within the investigated temperature range.},
doi = {10.1063/1.5028141},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 18,
volume = 123,
place = {United States},
year = {2018},
month = {5}
}

Journal Article:
Free Publicly Available Full Text
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Cited by: 2 works
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Figures / Tables:

FIG. 1 FIG. 1: Thermal conductivity as a function of temperature for InAs, Si, and diamond with an θD of 280, 643, and 1870 K, respectively.

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Works referenced in this record:

Seeded growth of AlN single crystals by physical vapor transport
journal, January 2006


    Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.