Impact of Linearity and Write Noise of Analog Resistive Memory Devices in a Neural Algorithm Accelerator.
Abstract not provided.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1511129
- Report Number(s):
- SAND2017-12403C; 658730
- Resource Relation:
- Conference: Proposed for presentation at the 2017 IEEE International Conference on Rebooting Computing (ICRC) held November 8-9, 2017 in Washington, DC.
- Country of Publication:
- United States
- Language:
- English
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