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Title: High Voltage Re-Grown GaN P-N Diodes Enabled by Defect and Doping Control (invited).

Abstract

Abstract not provided.

Authors:
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
OSTI Identifier:
1511118
Report Number(s):
SAND2017-12372PE
658713
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Proposed for presentation at the ARPA-E PNDIODES Program Kickoff held November 7-8, 2017 in New York, NY.
Country of Publication:
United States
Language:
English

Citation Formats

Allerman, Andrew A. High Voltage Re-Grown GaN P-N Diodes Enabled by Defect and Doping Control (invited).. United States: N. p., 2017. Web.
Allerman, Andrew A. High Voltage Re-Grown GaN P-N Diodes Enabled by Defect and Doping Control (invited).. United States.
Allerman, Andrew A. Wed . "High Voltage Re-Grown GaN P-N Diodes Enabled by Defect and Doping Control (invited).". United States. https://www.osti.gov/servlets/purl/1511118.
@article{osti_1511118,
title = {High Voltage Re-Grown GaN P-N Diodes Enabled by Defect and Doping Control (invited).},
author = {Allerman, Andrew A.},
abstractNote = {Abstract not provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2017},
month = {11}
}

Conference:
Other availability
Please see Document Availability for additional information on obtaining the full-text document. Library patrons may search WorldCat to identify libraries that hold this conference proceeding.

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